BTA312X-600E
3Q Hi-Com Triac
30 May 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full
pack" plastic package. This "series E" triac balances the requirements of commutation
performance and gate sensitivity and is intended for interfacing with low power drivers
including microcontrollers.
2. Features and benefits
•
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct interfacing with low power drivers and microcontrollers
Good immunity to false turn-on by dV/dt
High commutation capability with sensitive gate
High voltage capability
Isolated mounting base package
Planar passivated for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Triggering in three quadrants only
3. Applications
•
•
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
h
≤ 59 °C;
Fig. 1; Fig. 2;
Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
-
-
10
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
100
12
Unit
V
A
A
Scan or click this QR code to view the latest information for this product
TO
-2
20F
NXP Semiconductors
BTA312X-600E
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
-
-
Typ
-
-
Max
10
10
Unit
mA
mA
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA312X-600E
BTA312X-600E/DG
TO-220F
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
SOT186A
Type number
7. Marking
Table 4.
Marking codes
Marking code
BTA312X-600EDG
Type number
BTA312X-600E
BTA312X-600E/DG
BTA312X-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
30 May 2014
2 / 13
NXP Semiconductors
BTA312X-600E
3Q Hi-Com Triac
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
h
≤ 59 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
15
Conditions
Min
-
-
-
-
-
-
-
-
Max
600
12
100
110
50
100
2
5
0.5
150
125
003a a b681
Unit
V
A
A
A
2
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20 ms period
-
-40
-
003a a b679
100
I
T(RMS )
(A)
80
I
T(RMS )
(A)
10
60
40
5
20
0
-50
0
50
100
T
h
(°C)
150
0
10
-2
10
-1
1
10
s urge duration (s )
Fig. 1.
RMS on-state current as a function of heatsink
temperature; maximum values
f = 50 Hz; T
h
= 59 °C
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
BTA312X-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
30 May 2014
3 / 13
NXP Semiconductors
BTA312X-600E
3Q Hi-Com Triac
16
P
tot
(W)
12
003aab690
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
8
4
0
0
3
6
9
I
T(RMS)
(A)
12
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
10
3
I
TSM
(A)
(1)
003aab806
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 4.
Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA312X-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
30 May 2014
4 / 13
NXP Semiconductors
BTA312X-600E
3Q Hi-Com Triac
I
TSM
(A)
100
80
60
40
20
0
120
003aab809
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 5.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA312X-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
30 May 2014
5 / 13
京公网安备 11010802033920号
EEWORLD
