PNP BC160/10 – BC160/16
PNP BC161/10 – BC161/16
GENERAL PURPOSE TRANSISTORS
They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package.
They are particulary designed for audio amplifiers and switching applications up to 1A.
NPN complements are the BC140 – BC141.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
-I
B
P
tot
T
J
T
Stg
Junction Temperature
Storage Temperature range
Collector-Base Voltage
I
E
= 0
Collector-Emitter Voltage
I
B
= 0
Emitter-Base Voltage
I
C
= 0
Collector Current
Base Current
Ratings
BC160
BC161
BC160
BC161
BC160
BC161
BC160
BC161
BC160
BC161
@ T
case
= < 45°
@ T
amb
=
< 45°
Value
40
60
40
60
5
1
0.1
3.7
0.65
175
-55 to +175
Unit
V
V
V
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-c
R
thJ-amb
Ratings
Thermal Resistance, Junction-case
Thermal Resistance, Junction-ambient
Value
35
200
Unit
K/ W
K/ W
COMSET SEMICONDUCTORS
1/3
PNP BC160/10 – BC160/16
PNP BC161/10 – BC161/16
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
-I
CES
-V
CB0
-V
CE0
(*)
-V
EB0
-V
CE(SAT)
(*)
Ratings
Collector – Cutoff Current
Collector – Base Breakdown
Voltage
Collector – Emitter
Breakdown Voltage
Emitter – Base Breakdown
Voltage
Collector-Emitter saturation
Voltage
Base-Emitter Voltage
Test Condition(s)
I
E
= 0 ;V
CES
= 40 V
I
E
= 0 ;V
CES
= 60 V
I
E
= 0 ; V
V
CES
=40 V
T
amb
= 150°c
V
CES
=60 V
Min
-
-
40
60
40
60
5
-
-
-
-
-
-
40
63
100
-
-
-
50
-
-
-
Typ Mx Unit
-
-
-
-
-
-
-
0.1
0.35
0.6
1
110
80
120
140
100
160
26
20
30
-
15
-
-
100
100
-
-
-
-
-
nA
µA
V
V
V
-I
C
= 100 µA
I
E
= 0
-I
C
= 10 mA
I
B
= 0
-I
E
= 100 µA
I
C
= 0
-I
C
= 100 mA , -I
B
= 10 mA
-I
C
= 500 mA , -I
B
= 50 mA
-I
C
= 1 A, -I
B
= 100 mA
-I
C
= 1 A , -V
CE
= 1V
-I
C
= 100 µA , -V
CE
= 1 V
BC160
BC161
BC160
BC161
BC160
BC161
BC160
BC161
BC160
BC161
-V
BE
(*)
Gr 10
Gr 16
Gr 10
Gr 16
Gr 10
Gr 16
h
FE
(*)
DC Current Gain
-I
C
= 100 mA , -V
CE
= 1 V
-I
C
= 1 A , -V
CE
= 1 V
f
T
C
CBO
t
off
t
on
Transition Frequency
Collector – base
Capacitance
Turn-off times
Turn-on times
-I
C
= 50 mA , -V
CE
= 10 V
I
E
= 0 ; -V
CB
= 20V
f = 1 MH
Z
-I
C
=100 mA
-I
B1
=-I
B2
=5 mA
-I
C
=100 Ma
-I
B1
=1 mA
1
1.7
-
-
-
250
160
250
-
-
-
-
30
650
500
V
-
MH
Z
pF
ns
ns
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%
COMSET SEMICONDUCTORS
2/3
PNP BC160/10 – BC160/16
PNP BC161/10 – BC161/16
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm)
min
A
B
D
E
F
G
H
I
L
12.7
-
-
-
-
5.08
-
-
45°
typ
-
-
-
-
-
-
-
-
-
max
-
0.49
6.6
8.5
9.4
-
1.2
0.9
-
Pin 1 :
Pin 2 :
Case :
Emitter
Base
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
3/3
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