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HER307G

Description
3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size145KB,2 Pages
ManufacturerDAESAN
Websitehttp://www.diodelink.com
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HER307G Overview

3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD

HER301G THRU HER308G
Features
· Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
· Low forward voltage drop
· High current capability
· High reliability
· Low power loss, high effciency
· Glass passivated junction
· High speed switching
· Low leakage
CURRENT 3.0 Amperes
VOLTAGE 50 to 1000 Volts
DO-201AD
0.210(5.3)
0.188(4.8)
DIA.
1.0(25.4)
MIN.
Mechanical Data
· Case : JEDEC DO-201AD molded plastic body
· Epoxy : UL94V-0 rate flame retardant
· Lead : Plated axial lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.042 ounce, 1.19 gram
0.375(9.5)
0.285(7.2)
0.042(1.1)
0.037(0.9)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length @ at T
A
=55℃
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 2.0A
Maximum DC reverse current at rated DC
blocking voltage T
A
=25℃
Maximum DC reverse current at rated DC
blocking voltage T
A
=125℃
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Operating junction and storage
temperature range
I
R
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
HER HER HER HER HER HER
301G 302G 303G 304G 305G 306G
50
35
50
100
70
100
200
140
200
300
210
300
3.0
100
1.0
1.3
10.0
400
280
400
600
420
600
HER HER
307G 308G
800
560
800
1000
700
1000
Units
Volts
Volts
Volts
Amps
Amps
1.7
Volts
μA
200
Trr
C
J
T
J
T
STG
50
70
-65 to +150
75
50
ns
pF
Notes:
(1) Test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A.
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.

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HER307G HER301G HER303G HER305G HER308G HER306G HER304G
Description 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD
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