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2SC5013

Description
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size636KB,18 Pages
ManufacturerNEC Electronics
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2SC5013 Overview

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN,

2SC5013 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionCOLLECTOR
Maximum collector current (IC)0.035 A
Collector-based maximum capacity0.8 pF
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)10000 MHz
Base Number Matches1

2SC5013 Related Products

2SC5013 2SC5008 2SC3587 2SC4095 2SC4228 NE68000
Description RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN, RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN, RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon, NPN, RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SC-70, SUPERMINI-3 RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon, NPN,
Maker NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics
Reach Compliance Code compliant unknown unknown compliant compliant unknown
JESD-30 code R-PDSO-G4 R-PDSO-G3 X-CXMW-F4 R-PDSO-G4 R-PDSO-G3 R-XUUC-N2
Number of terminals 4 3 4 4 3 2
Package body material PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY PLASTIC/EPOXY UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR UNSPECIFIED RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE MICROWAVE SMALL OUTLINE SMALL OUTLINE UNCASED CHIP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING FLAT GULL WING GULL WING NO LEAD
Terminal location DUAL DUAL UNSPECIFIED DUAL DUAL UPPER
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G3 MICROWAVE, X-CXMW-F4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G3 -
Contacts 4 3 - 4 3 -
ECCN code EAR99 - EAR99 EAR99 EAR99 -
Other features LOW NOISE - LOW NOISE VERY LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.035 A - 0.035 A 0.035 A 0.035 A 0.035 A
Collector-based maximum capacity 0.8 pF - 0.7 pF 0.8 pF 0.7 pF -
Collector-emitter maximum voltage 10 V - 10 V 10 V 10 V 10 V
Configuration SINGLE - SINGLE SINGLE SINGLE SINGLE
Number of components 1 - 1 1 1 1
Polarity/channel type NPN - NPN NPN NPN NPN
transistor applications AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER -
Transistor component materials SILICON - SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 10000 MHz - 10000 MHz 10000 MHz 8000 MHz 10000 MHz
Base Number Matches 1 1 1 1 1 -
highest frequency band - - C BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND C BAND
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