2SC4095 datasheet, PDF - EEWORLD Datasheet

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2SC4095: DescriptionRF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,; CategoryDiscrete semiconductor The transistor; File Size636KB，18 Pages; ManufacturerNEC Electronics

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2SC4095 Overview

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

2SC4095 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	NEC Electronics
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	VERY LOW NOISE
Shell connection	COLLECTOR
Maximum collector current (IC)	0.035 A
Collector-based maximum capacity	0.8 pF
Collector-emitter maximum voltage	10 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	230
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	10000 MHz
Base Number Matches	1

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2SC4095 Related Products

	2SC4095	2SC5013	2SC5008	2SC3587	2SC4228	NE68000
Description	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN,	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN,	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon, NPN,	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SC-70, SUPERMINI-3	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon, NPN,
Maker	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics
Reach Compliance Code	compliant	compliant	unknown	unknown	compliant	unknown
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G3	X-CXMW-F4	R-PDSO-G3	R-XUUC-N2
Number of terminals	4	4	3	4	3	2
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	UNSPECIFIED	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	MICROWAVE	SMALL OUTLINE	UNCASED CHIP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	FLAT	GULL WING	NO LEAD
Terminal location	DUAL	DUAL	DUAL	UNSPECIFIED	DUAL	UPPER
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G3	MICROWAVE, X-CXMW-F4	SMALL OUTLINE, R-PDSO-G3	-
Contacts	4	4	3	-	3	-
ECCN code	EAR99	EAR99	-	EAR99	EAR99	-
Other features	VERY LOW NOISE	LOW NOISE	-	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.035 A	0.035 A	-	0.035 A	0.035 A	0.035 A
Collector-based maximum capacity	0.8 pF	0.8 pF	-	0.7 pF	0.7 pF	-
Collector-emitter maximum voltage	10 V	10 V	-	10 V	10 V	10 V
Configuration	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND	-	-	C BAND	ULTRA HIGH FREQUENCY BAND	C BAND
Number of components	1	1	-	1	1	1
Polarity/channel type	NPN	NPN	-	NPN	NPN	NPN
transistor applications	AMPLIFIER	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	-
Transistor component materials	SILICON	SILICON	-	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	10000 MHz	10000 MHz	-	10000 MHz	8000 MHz	10000 MHz
Base Number Matches	1	1	1	1	1	-

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