RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon, NPN,
| Parameter Name | Attribute value |
| Maker | NEC Electronics |
| package instruction | MICROWAVE, X-CXMW-F4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Maximum collector current (IC) | 0.035 A |
| Collector-based maximum capacity | 0.7 pF |
| Collector-emitter maximum voltage | 10 V |
| Configuration | SINGLE |
| highest frequency band | C BAND |
| JESD-30 code | X-CXMW-F4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | UNSPECIFIED |
| Package form | MICROWAVE |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | UNSPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 10000 MHz |
| Base Number Matches | 1 |
| 2SC3587 | 2SC5013 | 2SC5008 | 2SC4095 | 2SC4228 | NE68000 | |
|---|---|---|---|---|---|---|
| Description | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SC-70, SUPERMINI-3 | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon, NPN, |
| Maker | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics |
| Reach Compliance Code | unknown | compliant | unknown | compliant | compliant | unknown |
| JESD-30 code | X-CXMW-F4 | R-PDSO-G4 | R-PDSO-G3 | R-PDSO-G4 | R-PDSO-G3 | R-XUUC-N2 |
| Number of terminals | 4 | 4 | 3 | 4 | 3 | 2 |
| Package body material | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | UNSPECIFIED |
| Package shape | UNSPECIFIED | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROWAVE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | UNCASED CHIP |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | YES |
| Terminal form | FLAT | GULL WING | GULL WING | GULL WING | GULL WING | NO LEAD |
| Terminal location | UNSPECIFIED | DUAL | DUAL | DUAL | DUAL | UPPER |
| package instruction | MICROWAVE, X-CXMW-F4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G3 | - |
| ECCN code | EAR99 | EAR99 | - | EAR99 | EAR99 | - |
| Other features | LOW NOISE | LOW NOISE | - | VERY LOW NOISE | LOW NOISE | LOW NOISE |
| Maximum collector current (IC) | 0.035 A | 0.035 A | - | 0.035 A | 0.035 A | 0.035 A |
| Collector-based maximum capacity | 0.7 pF | 0.8 pF | - | 0.8 pF | 0.7 pF | - |
| Collector-emitter maximum voltage | 10 V | 10 V | - | 10 V | 10 V | 10 V |
| Configuration | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE |
| highest frequency band | C BAND | - | - | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | C BAND |
| Number of components | 1 | 1 | - | 1 | 1 | 1 |
| Polarity/channel type | NPN | NPN | - | NPN | NPN | NPN |
| transistor applications | AMPLIFIER | AMPLIFIER | - | AMPLIFIER | AMPLIFIER | - |
| Transistor component materials | SILICON | SILICON | - | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 10000 MHz | 10000 MHz | - | 10000 MHz | 8000 MHz | 10000 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - |
| Contacts | - | 4 | 3 | 4 | 3 | - |
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