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H7N0603DSTL-E

Description
Silicon N Channel MOS FET High Speed Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size76KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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H7N0603DSTL-E Overview

Silicon N Channel MOS FET High Speed Power Switching

H7N0603DSTL-E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-63
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)30 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.022 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)250
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)40 W
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
H7N0603DL, H7N0603DS
Silicon N Channel MOS FET
High speed power Switching
REJ03G0123-0200
Rev.2.00
Jan.26.2005
Features
Low on - resistance
R
DS
(on) = 11 mΩ typ.
Low drive current
Capable of 4.5 gate drive
Outline
PRSS0004ZD-B
(Previous code: DPAK(L)-2)
D
4
PRSS0004ZD-C
(Previous code: DPAK-(S))
4
G
1 2
3
1. Gate
2. Drain
3. Source
4. Drain
H7N0603DS
S
1 2
3
H7N0603DL
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
10
µs,
duty cycle
1%
2. Tc = 25°C
3. Tch = 25°C, Rg
50Ω
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note1
I
DR
I
APNote3
E
ARNote3
Pch
Note2
Tch
Tstg
Ratings
60
±20
30
120
30
25
53.6
40
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.2.00, Jan.26.2005, page 1 of 8

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Is it lead-free? Lead free - Contains lead Contains lead Contains lead Contains lead - -
Is it Rohs certified? conform to conform to incompatible incompatible incompatible incompatible - -
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 TO-220AB, 3 PIN - -
Contacts 3 4 3 3 3 3 - -
Reach Compliance Code compli compli compli compli compli compliant - -
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 - - -
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN - -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - -
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V 60 V 350 V - -
Maximum drain current (Abs) (ID) 30 A 30 A 30 A 30 A - 7 A - -
Maximum drain current (ID) 30 A 30 A 30 A 30 A 30 A 7 A - -
Maximum drain-source on-resistance 0.022 Ω 0.022 Ω 0.022 Ω 0.022 Ω 0.022 Ω 0.8 Ω - -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - -
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSFM-T3 - -
JESD-609 code e6 e6 e0 e0 e0 e0 - -
Number of components 1 1 1 1 1 1 - -
Number of terminals 2 3 2 3 2 3 - -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C - 150 °C - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - -
Package form SMALL OUTLINE IN-LINE SMALL OUTLINE IN-LINE SMALL OUTLINE FLANGE MOUNT - -
Peak Reflow Temperature (Celsius) 250 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - -
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL - -
Maximum power dissipation(Abs) 40 W 40 W 40 W 40 W - 50 W - -
Maximum pulsed drain current (IDM) 120 A 120 A 120 A 120 A 120 A 28 A - -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - -
surface mount YES NO YES NO YES NO - -
Terminal surface TIN BISMUTH TIN BISMUTH Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD TIN LEAD - -
Terminal form GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE - -
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE - -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING - -
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON - -
Base Number Matches 1 1 1 1 1 1 - -
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