H7N0603DL, H7N0603DS
Silicon N Channel MOS FET
High speed power Switching
REJ03G0123-0200
Rev.2.00
Jan.26.2005
Features
•
Low on - resistance
R
DS
(on) = 11 mΩ typ.
•
Low drive current
•
Capable of 4.5 gate drive
Outline
PRSS0004ZD-B
(Previous code: DPAK(L)-2)
D
4
PRSS0004ZD-C
(Previous code: DPAK-(S))
4
G
1 2
3
1. Gate
2. Drain
3. Source
4. Drain
H7N0603DS
S
1 2
3
H7N0603DL
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Tc = 25°C
3. Tch = 25°C, Rg
≥
50Ω
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note1
I
DR
I
APNote3
E
ARNote3
Pch
Note2
Tch
Tstg
Ratings
60
±20
30
120
30
25
53.6
40
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.2.00, Jan.26.2005, page 1 of 8
H7N0603DL, H7N0603DS
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer capacitance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
fall time
Body - drain diode forward voltage
Body – drain diode reverse recovery
time
Notes: 1. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
60
±20
—
—
1.5
—
—
24
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
11
16
40
3200
385
225
56
11
12
30
125
90
17
0.9
30
Max
—
—
±10
10
2.5
15
22
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test condition
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 15 A, V
GS
= 10 V
Note1
I
D
= 15 A, V
GS
= 4.5 V
Note1
I
D
= 15 A, V
DS
= 10 V
Note1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 25 V
V
GS
= 10 V
I
D
= 30 A
V
GS
= 10 V, I
D
= 15 A
R
L
= 2.0
Ω
Rg = 4.7
Ω
I
F
= 30 A, V
GS
= 0
Note1
I
F
= 30 A, V
GS
= 0
diF / dt = 100 A /
µs
Rev.2.00, Jan.26.2005, page 2 of 8
H7N0603DL, H7N0603DS
Main Characteristics
Power vs. Tmperature Derating
50
1000
300
Maximum Safe Operation Area
Pch (W)
(A)
40
30
100
30
10
3
1
0.3
Operation in
0.1
this area is
0.03
0.01 Ta = 25°C
0.1 0.3
1
limited by R
DS(on)
PW = 10 ms
(1 shot)
10
DC Operation
(Tc = 25°C)
10
0
µ
µ
s
s
Channel Dissipation
I
D
1
s
m
20
10
0
50
100
150
Tc (°C)
200
Drain Current
3
10
30
100
Case Temperature
Drain to Source Voltage
V
DS
(V)
Typical Output Characterristics
50
V
GS
= 10 V
5.0 V
4.5 V
Pulse Test
50
Typical Trasfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
30
3.5 V
20
I
D
Drain Current
(A)
40
4.0 V
40
30
Drain Current
20
150°C
10
25°C
Tc=–40°C
0
2
4
6
8
V
GS
(V)
10
Gate to Source Voltage
10
3V
2.5 V
0
2
4
6
8
10
Drain to Source Voltage
V
DS
(V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source State Resistance
vs. Drain Current
Drain to Source Voltage V
DS(on)
(mV)
Pulse Test
Drain Source On State Resistance
R
DS(on)
(mΩ)
500
100
Pulse Test
30
400
300
I
D
= 20 A
200
10 A
5A
0
12
4
8
Gate to Source Voltage
16
V
GS
(V)
20
V
GS
= 4.5 V
10
10 V
100
3
1
1
10
3
Drain Current
I
D
30
(A)
100
Rev.2.00, Jan.26.2005, page 3 of 8
H7N0603DL, H7N0603DS
Static Drain to State Resistance
vs. Temperature
Drain Source On State Resistance
R
DS(on)
(mΩ)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
50
Pulse Test
40
100
Tc = –40°C
10
1
0.1
0.01
25°C
150°C
30
5, 10, 20 A
20
4.5 V
10
V
GS
= 10 V
0
–50
0
5, 10, 20 A
50
100
Tc (°C)
150
0.001
V
DS
= 10 V
Pulse Test
0.1
1
(A)
10
100
Drain Current I
D
0.0001 0.001 0.01
Case Temperature
Body-Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
Capacitance C (pF)
300
100
30
10
3
1
0.1
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
Ciss
1000
300
100
Coss
Crss
0.3
1
3
10
30
I
DR
100
(A)
Reverse Drain Current
30 V
GS
= 0
f = 1 MHz
10
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Switching Characteristics
Dynamic Input Characteristics
100
(V)
20
I
D
= 30 A
(V)
1000
300
Switching Time t (ns)
V
GS
16
tr
tf
td(off)
td(on)
tr
tf
V
DS
80
V
DD
= 50 V
25 V
10 V
V
GS
100
30
10
Drain to Source Voltage
V
DS
40
8
Gate Source Voltage
60
12
20
V
DD
= 50 V
25 V
10 V
20
40
60
Reverse Drain Current
4
0
80
100
Qg (nc)
0
V
GS
= 10 V, V
DD
= 30 V
3 PW = 5
µs,
duty < 1 %
Rg = 4.7
Ω
1
0.1
0.3
3
10
1
30
Drain Current I
D
(A)
100
Rev.2.00, Jan.26.2005, page 4 of 8
H7N0603DL, H7N0603DS
Reverse Drain Current vs.
Source to Drain Voltage
50
(A)
Maximum Avalanche Energy vs.
Channel Temperature Derating
(mJ)
80
I
AP
= 25 A
V
DD
= 25 V
duty < 0.1 %
Rg > 50
Ω
10 V
40
Repetitive Avalanche Energy E
AR
Reverse Drain Current I
DR
64
30
48
5V
20
V
GS
= 0, –5 V
Pulse Test
0
0.4
0.8
1.2
1.6
V
SD
2.0
(V)
Source to Drain Voltage
32
10
16
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
γs
(t)
3
Tc = 25°C
Normalized Transient Thermal Impedance
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
2
0.0
θch
- c(t) =
γs
(t)
• θch
- c
θch
- c = 3.125°C/ W, Tc = 25°C
PDM
0.03
0
.01
D=
PW
T
PW
T
1sh
ot
0.01
10
µ
100
µ
1m
10 m
100 m
Pulse Width PW (S)
1
10
Avalanche Test Circuit
Avalanche Waveform
1
2
E
AR
=
• L • I
AP
•
2
V
DSS
V
DSS
– V
DD
V
DS
Monitor
L
I
AP
Monitor
V
(BR)DSS
I
AP
V
DD
I
D
V
DS
Rg
Vin
15 V
D. U. T
50Ω
0
V
DD
Rev.2.00, Jan.26.2005, page 5 of 8
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