EEWORLDEEWORLDEEWORLD

Part Number

Search

2SK1400A_10

Description
Silicon N Channel MOS FET High Speed Power Switching
File Size76KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Compare View All

2SK1400A_10 Overview

Silicon N Channel MOS FET High Speed Power Switching

H7N0603DL, H7N0603DS
Silicon N Channel MOS FET
High speed power Switching
REJ03G0123-0200
Rev.2.00
Jan.26.2005
Features
Low on - resistance
R
DS
(on) = 11 mΩ typ.
Low drive current
Capable of 4.5 gate drive
Outline
PRSS0004ZD-B
(Previous code: DPAK(L)-2)
D
4
PRSS0004ZD-C
(Previous code: DPAK-(S))
4
G
1 2
3
1. Gate
2. Drain
3. Source
4. Drain
H7N0603DS
S
1 2
3
H7N0603DL
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
10
µs,
duty cycle
1%
2. Tc = 25°C
3. Tch = 25°C, Rg
50Ω
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note1
I
DR
I
APNote3
E
ARNote3
Pch
Note2
Tch
Tstg
Ratings
60
±20
30
120
30
25
53.6
40
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.2.00, Jan.26.2005, page 1 of 8

2SK1400A_10 Related Products

2SK1400A_10 H7N0603DL-E H7N0603DSTL H7N0603DL H7N0603DS H7N0603DSTL-E 2SK1400A PT7M6118NLEC4E
Description Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Low Power Voltage Detector
Is it Rohs certified? - conform to incompatible incompatible incompatible conform to incompatible -
package instruction - IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 TO-220AB, 3 PIN -
Contacts - 4 3 3 3 3 3 -
Reach Compliance Code - compli compli compli compli compli compliant -
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99 - -
Shell connection - DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN -
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage - 60 V 60 V 60 V 60 V 60 V 350 V -
Maximum drain current (Abs) (ID) - 30 A 30 A 30 A - 30 A 7 A -
Maximum drain current (ID) - 30 A 30 A 30 A 30 A 30 A 7 A -
Maximum drain-source on-resistance - 0.022 Ω 0.022 Ω 0.022 Ω 0.022 Ω 0.022 Ω 0.8 Ω -
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JESD-30 code - R-PSIP-T3 R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSFM-T3 -
JESD-609 code - e6 e0 e0 e0 e6 e0 -
Number of components - 1 1 1 1 1 1 -
Number of terminals - 3 2 3 2 2 3 -
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature - 150 °C 150 °C 150 °C - 150 °C 150 °C -
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form - IN-LINE SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT -
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 250 NOT SPECIFIED -
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) - 40 W 40 W 40 W - 40 W 50 W -
Maximum pulsed drain current (IDM) - 120 A 120 A 120 A 120 A 120 A 28 A -
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
surface mount - NO YES NO YES YES NO -
Terminal surface - TIN BISMUTH Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD TIN BISMUTH TIN LEAD -
Terminal form - THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE -
Terminal location - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials - SILICON SILICON SILICON SILICON SILICON SILICON -
Base Number Matches - 1 1 1 1 1 1 -
Is it lead-free? - - Contains lead Contains lead Contains lead Lead free Contains lead -

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2504  2352  610  612  1739  51  48  13  36  6 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号