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2N6427RL

Description
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size165KB,5 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

2N6427RL Overview

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

2N6427RL Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)0.5 A
Collector-based maximum capacity7 pF
Collector-emitter maximum voltage40 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)14000
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power consumption environment1.5 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)125 MHz
VCEsat-Max1.5 V
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