BFR181TW datasheet, PDF - EEWORLD Datasheet

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BFR181TW: DescriptionRF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,; CategoryDiscrete semiconductor The transistor; File Size58KB，1 Pages; ManufacturerTEMIC; Websitehttp://www.temic.de/

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BFR181TW Overview

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

BFR181TW Parametric

Parameter Name	Attribute value
Maker	TEMIC
Reach Compliance Code	unknown
Maximum collector current (IC)	0.02 A
Collector-emitter maximum voltage	10 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Minimum power gain (Gp)	14.8 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	7800 MHz
Base Number Matches	1

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Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	0.02 A	0.01 A	0.01 A	0.035 A	0.065 A	0.02 A	0.008 A
Collector-emitter maximum voltage	10 V	8 V	8 V	10 V	10 V	10 V	6 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100	100	100	110	100	90
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1	1	1	1
Number of terminals	3	4	4	4	4	4	4
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Minimum power gain (Gp)	14.8 dB	16 dB	16 dB	18 dB	17 dB	17 dB	14 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	7800 MHz	7000 MHz	7000 MHz	7500 MHz	7400 MHz	7800 MHz	5200 MHz
Maker	TEMIC	TEMIC	TEMIC	-	-	TEMIC	TEMIC
Base Number Matches	1	1	1	1	1	1	-

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