DATA SHEET
2G bits DDR2 SDRAM
EDE2104ABSE (512M words
×
4 bits)
EDE2108ABSE (256M words
×
8 bits)
Specifications
•
Density: 2G bits
•
Organization
64M words
×
4 bits
×
8 banks (EDE2104ABSE)
32M words
×
8 bits
×
8 banks (EDE2108ABSE)
•
Package
68-ball FBGA
Lead-free (RoHS compliant)
•
Power supply: VDD, VDDQ
=
1.8V
±
0.1V
•
Data rate
800Mbps/667Mbps/533Mbps (max.)
•
1KB page size
Row address: A0 to A14
Column address: A0 to A9, A11 (EDE2104ABSE)
A0 to A9 (EDE2108ABSE)
•
Eight internal banks for concurrent operation
•
Interface: SSTL_18
•
Burst lengths (BL): 4, 8
•
Burst type (BT):
Sequential (4, 8)
Interleave (4, 8)
•
/CAS Latency (CL): 3, 4, 5, 6
•
Precharge: auto precharge option for each burst
access
•
Driver strength: normal/weak
•
Refresh: auto-refresh, self-refresh
Features
•
Double-data-rate architecture; two data transfers per
clock cycle
•
The high-speed data transfer is realized by the 4 bits
prefetch pipelined architecture
•
Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
•
DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
•
Differential clock inputs (CK and /CK)
•
DLL aligns DQ and DQS transitions with CK
transitions
•
Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
•
Data mask (DM) for write data
•
Posted /CAS by programmable additive latency for
better command and data bus efficiency
•
Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
•
Programmable RDQS, /RDQS output for making
×
8
organization compatible to
×
4 organization
•
/DQS, (/RDQS) can be disabled for single-ended
Data Strobe operation
•
Refresh cycles: 8192 cycles/64ms
Average refresh period
7.8µs at 0°C
≤
TC
≤ +85°C
3.9µs at
+85°C <
TC
≤ +95°C
•
Operating case temperature range
TC = 0°C to +95°C
Document No. E1196E30 (Ver.3.0)
Date Published December 2008 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2007-2008
EDE2104ABSE, EDE2108ABSE
Ordering Information
Part number
EDE2104ABSE-8G-E
EDE2104ABSE-6E-E
EDE2104ABSE-5C-E
EDE2108ABSE-8G-E
EDE2108ABSE-6E-E
EDE2108ABSE-5C-E
Die
revision
B
Organization
(words
×
bits)
512M
×
4
Internal
Banks
8
Speed bin
(CL-tRCD-tRP)
DDR2-800 (6-6-6)
DDR2-667 (5-5-5)
DDR2-533 (4-4-4)
DDR2-800 (6-6-6)
DDR2-667 (5-5-5)
DDR2-533 (4-4-4)
Package
68-ball FBGA
256M
×
8
Part Number
E D E 21 04 A B SE - 8G - E
Elpida Memory
Type
D: Monolithic Device
Product Family
E: DDR2
Environment code
E: Lead Free
(RoHS compliant)
Density / Bank
21: 2Gb / 8-bank
Organization
04: x4
08: x8
Power Supply, Interface
A: 1.8V, SSTL_18
Speed
8G DDR2-800 (6-6-6)
6E: DDR2-667 (5-5-5)
5C: DDR2-533 (4-4-4)
Package
SE: FBGA
Die Rev.
Data Sheet E1196E30 (Ver. 3.0)
2
EDE2104ABSE, EDE2108ABSE
Pin Configurations
/xxx indicates active low signal.
68-ball FBGA
(×8,
×4
organization)
1
A
NC
B
C
D
E
VDD
NU/ /RDQS
VSS
(NC)*
2
NC
3
7
8
NC
9
NC
VSSQ /DQS VDDQ
DQS
VDDQ
DQ2
VSSDL
/RAS
/CAS
A2
A6
A11
NC
VSSQ
DQ0
VSSQ
CK
/CK
/CS
A0
A4
A8
A13
VSS
VDD
(NC)*
F
G
DQ6
DM/RDQS
(NC)*
VSSQ
(DM)*
VDDQ
DQ1 VDDQ
VSSQ
DQ3
VSS
/WE
BA1
A1
A5
A9
A14
DQ7
VDDQ
(NC)*
H
J
(NC)*
DQ4
DQ5
VDDL VREF
K
CKE
L
BA2
M
A10
N
VSS
P
A7
R
VDD
T
U
V
W
NC
NC
A12
A3
BA0
VDD
ODT
NC
(Top view)
NC
Note: ( )* marked pins are for
×4
organization.
Pin name
A0 to A14
BA0, BA1, BA2
DQ0 to DQ7
DQS, /DQS
RDQS, /RDQS
/CS
/RAS, /CAS, /WE
CKE
CK, /CK
DM
Function
Address inputs
Bank select
Data input/output
Differential data strobe
Differential data strobe for read
Chip select
Command input
Clock enable
Differential clock input
Write data mask
Pin name
ODT
VDD
VSS
VDDQ
VSSQ
VREF
VDDL
VSSDL
NC*
NU*
1
2
Function
ODT control
Supply voltage for internal circuit
Ground for internal circuit
Supply voltage for DQ circuit
Ground for DQ circuit
Input reference voltage
Supply voltage for DLL circuit
Ground for DLL circuit
No connection
Not usable
Notes: 1. Not internally connected with die.
2. Don’t connect. Internally connected.
Data Sheet E1196E30 (Ver. 3.0)
3
EDE2104ABSE, EDE2108ABSE
CONTENTS
Specifications.................................................................................................................................................1
Features.........................................................................................................................................................1
Ordering Information......................................................................................................................................2
Part Number ..................................................................................................................................................2
Pin Configurations .........................................................................................................................................3
Electrical Specifications.................................................................................................................................5
Block Diagram .............................................................................................................................................29
Pin Function.................................................................................................................................................30
Command Operation ...................................................................................................................................32
Simplified State Diagram .............................................................................................................................40
Operation of DDR2 SDRAM ........................................................................................................................41
Package Drawing ........................................................................................................................................78
Recommended Soldering Conditions..........................................................................................................79
Data Sheet E1196E30 (Ver. 3.0)
4
EDE2104ABSE, EDE2108ABSE
Electrical Specifications
•
All voltages are referenced to VSS (GND)
•
Execute power-up and Initialization sequence before proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Power supply voltage
Power supply voltage for output
Input voltage
Output voltage
Storage temperature
Power dissipation
Short circuit output current
Symbol
VDD
VDDQ
VIN
VOUT
Tstg
PD
IOUT
Rating
−1.0
to +2.3
−0.5
to +2.3
−0.5
to +2.3
−0.5
to +2.3
−55
to +100
1.0
50
Unit
V
V
V
V
°C
W
mA
Notes
1
1
1
1
1, 2
1
1
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter
Operating case temperature
Symbol
TC
Rating
0 to +95
Unit
°C
Notes
1, 2
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. Supporting 0°C to +85°C with full AC and DC specifications.
Supporting 0°C to +85°C and being able to extend to +95°C with doubling auto-refresh commands in
frequency to a 32ms period (tREFI = 3.9µs) and higher temperature Self-Refresh entry via A7 "1" on
EMRS (2).
Data Sheet E1196E30 (Ver. 3.0)
5
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