EDE2104ABSE-5C-E datasheet, PDF

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EDE2104ABSE-5C-E: Description2G bits DDR2 SDRAM; Categorystorage storage; File Size702KB，81 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en; Environmental Compliance

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EDE2104ABSE-5C-E Overview

2G bits DDR2 SDRAM

EDE2104ABSE-5C-E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ELPIDA
Parts packaging code	BGA
package instruction	TFBGA, BGA68,9X19,32
Contacts	68
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	MULTI BANK PAGE BURST
Maximum access time	0.5 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	266 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B68
JESD-609 code	e1
length	19 mm
memory density	2147483648 bi
Memory IC Type	DDR DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	68
word count	536870912 words
character code	512000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	512MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA68,9X19,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.015 A
Maximum slew rate	0.26 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.2 mm

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DATA SHEET

2G bits DDR2 SDRAM

EDE2104ABSE (512M words

4 bits)

EDE2108ABSE (256M words

8 bits)

Specifications

•

Density: 2G bits

•

Organization



64M words

4 bits

8 banks (EDE2104ABSE)



32M words

8 bits

8 banks (EDE2108ABSE)

•

Package



68-ball FBGA



Lead-free (RoHS compliant)

•

Power supply: VDD, VDDQ

1.8V

0.1V

•

Data rate



800Mbps/667Mbps/533Mbps (max.)

•

1KB page size



Row address: A0 to A14



Column address: A0 to A9, A11 (EDE2104ABSE)

A0 to A9 (EDE2108ABSE)

•

Eight internal banks for concurrent operation

•

Interface: SSTL_18

•

Burst lengths (BL): 4, 8

•

Burst type (BT):



Sequential (4, 8)



Interleave (4, 8)

•

/CAS Latency (CL): 3, 4, 5, 6

•

Precharge: auto precharge option for each burst

access

•

Driver strength: normal/weak

•

Refresh: auto-refresh, self-refresh

Features

•

Double-data-rate architecture; two data transfers per

clock cycle

•

The high-speed data transfer is realized by the 4 bits

prefetch pipelined architecture

•

Bi-directional differential data strobe (DQS and /DQS)

is transmitted/received with data for capturing data at

the receiver

•

DQS is edge-aligned with data for READs; center-

aligned with data for WRITEs

•

Differential clock inputs (CK and /CK)

•

DLL aligns DQ and DQS transitions with CK

transitions

•

Commands entered on each positive CK edge; data

and data mask referenced to both edges of DQS

•

Data mask (DM) for write data

•

Posted /CAS by programmable additive latency for

better command and data bus efficiency

•

Off-Chip-Driver Impedance Adjustment and On-Die-

Termination for better signal quality

•

Programmable RDQS, /RDQS output for making

organization compatible to

4 organization

•

/DQS, (/RDQS) can be disabled for single-ended

Data Strobe operation

•

Refresh cycles: 8192 cycles/64ms



Average refresh period

7.8µs at 0°C

≤

≤ +85°C

3.9µs at

+85°C <

≤ +95°C

•

Operating case temperature range



TC = 0°C to +95°C

Document No. E1196E30 (Ver.3.0)

Date Published December 2008 (K) Japan

Printed in Japan

URL: http://www.elpida.com

Elpida

Memory, Inc. 2007-2008

EDE2104ABSE, EDE2108ABSE

CONTENTS

Specifications.................................................................................................................................................1

Features.........................................................................................................................................................1

Ordering Information......................................................................................................................................2

Part Number ..................................................................................................................................................2

Pin Configurations .........................................................................................................................................3

Electrical Specifications.................................................................................................................................5

Block Diagram .............................................................................................................................................29

Pin Function.................................................................................................................................................30

Command Operation ...................................................................................................................................32

Simplified State Diagram .............................................................................................................................40

Operation of DDR2 SDRAM ........................................................................................................................41

Package Drawing ........................................................................................................................................78

Recommended Soldering Conditions..........................................................................................................79

Data Sheet E1196E30 (Ver. 3.0)

EDE2104ABSE-5C-E Related Products

	EDE2104ABSE-5C-E	EDE2108ABSE-8G-E	EDE2108ABSE	EDE2108ABSE-6E-E	EDE2108ABSE-5C-E	EDE2104ABSE-8G-E	EDE2104ABSE-6E-E	EDE2104ABSE
Description	2G bits DDR2 SDRAM	2G bits DDR2 SDRAM	2G bits DDR2 SDRAM	2G bits DDR2 SDRAM	2G bits DDR2 SDRAM	2G bits DDR2 SDRAM	2G bits DDR2 SDRAM	2G bits DDR2 SDRAM
Is it Rohs certified?	conform to	conform to	-	conform to	conform to	conform to	conform to	-
Maker	ELPIDA	ELPIDA	-	ELPIDA	ELPIDA	ELPIDA	ELPIDA	-
Parts packaging code	BGA	BGA	-	BGA	BGA	BGA	BGA	-
package instruction	TFBGA, BGA68,9X19,32	TFBGA, BGA68,9X19,32	-	TFBGA, BGA68,9X19,32	TFBGA, BGA68,9X19,32	TFBGA, BGA68,9X19,32	TFBGA, BGA68,9X19,32	-
Contacts	68	68	-	68	68	68	68	-
Reach Compliance Code	unknow	unknow	-	unknow	unknow	unknow	unknow	-
ECCN code	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99	-
access mode	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	-	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	-
Maximum access time	0.5 ns	0.4 ns	-	0.45 ns	0.5 ns	0.4 ns	0.45 ns	-
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-
Maximum clock frequency (fCLK)	266 MHz	400 MHz	-	333 MHz	266 MHz	400 MHz	333 MHz	-
I/O type	COMMON	COMMON	-	COMMON	COMMON	COMMON	COMMON	-
interleaved burst length	4,8	4,8	-	4,8	4,8	4,8	4,8	-
JESD-30 code	R-PBGA-B68	R-PBGA-B68	-	R-PBGA-B68	R-PBGA-B68	R-PBGA-B68	R-PBGA-B68	-
JESD-609 code	e1	e1	-	e1	e1	e1	e1	-
length	19 mm	19 mm	-	19 mm	19 mm	19 mm	19 mm	-
memory density	2147483648 bi	2147483648 bi	-	2147483648 bi	2147483648 bi	2147483648 bi	2147483648 bi	-
Memory IC Type	DDR DRAM	DDR DRAM	-	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	-
memory width	4	8	-	8	8	4	4	-
Number of functions	1	1	-	1	1	1	1	-
Number of ports	1	1	-	1	1	1	1	-
Number of terminals	68	68	-	68	68	68	68	-
word count	536870912 words	268435456 words	-	268435456 words	268435456 words	536870912 words	536870912 words	-
character code	512000000	256000000	-	256000000	256000000	512000000	512000000	-
Operating mode	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-
Maximum operating temperature	85 °C	85 °C	-	85 °C	85 °C	85 °C	85 °C	-
organize	512MX4	256MX8	-	256MX8	256MX8	512MX4	512MX4	-
Output characteristics	3-STATE	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
encapsulated code	TFBGA	TFBGA	-	TFBGA	TFBGA	TFBGA	TFBGA	-
Encapsulate equivalent code	BGA68,9X19,32	BGA68,9X19,32	-	BGA68,9X19,32	BGA68,9X19,32	BGA68,9X19,32	BGA68,9X19,32	-
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
power supply	1.8 V	1.8 V	-	1.8 V	1.8 V	1.8 V	1.8 V	-
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
refresh cycle	8192	8192	-	8192	8192	8192	8192	-
Maximum seat height	1.2 mm	1.2 mm	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm	-
self refresh	YES	YES	-	YES	YES	YES	YES	-
Continuous burst length	4,8	4,8	-	4,8	4,8	4,8	4,8	-
Maximum standby current	0.015 A	0.015 A	-	0.015 A	0.015 A	0.015 A	0.015 A	-
Maximum slew rate	0.26 mA	0.29 mA	-	0.275 mA	0.26 mA	0.29 mA	0.275 mA	-
Maximum supply voltage (Vsup)	1.9 V	1.9 V	-	1.9 V	1.9 V	1.9 V	1.9 V	-
Minimum supply voltage (Vsup)	1.7 V	1.7 V	-	1.7 V	1.7 V	1.7 V	1.7 V	-
Nominal supply voltage (Vsup)	1.8 V	1.8 V	-	1.8 V	1.8 V	1.8 V	1.8 V	-
surface mount	YES	YES	-	YES	YES	YES	YES	-
technology	CMOS	CMOS	-	CMOS	CMOS	CMOS	CMOS	-
Temperature level	OTHER	OTHER	-	OTHER	OTHER	OTHER	OTHER	-
Terminal form	BALL	BALL	-	BALL	BALL	BALL	BALL	-
Terminal pitch	0.8 mm	0.8 mm	-	0.8 mm	0.8 mm	0.8 mm	0.8 mm	-
Terminal location	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
width	10.2 mm	10.2 mm	-	10.2 mm	10.2 mm	10.2 mm	10.2 mm	-

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