EDE2104ABSE datasheet, PDF - EEWORLD Datasheet

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EDE2104ABSE: Description2G bits DDR2 SDRAM; File Size702KB，81 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en

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EDE2104ABSE Overview

2G bits DDR2 SDRAM

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DATA SHEET

2G bits DDR2 SDRAM

EDE2104ABSE (512M words

4 bits)

EDE2108ABSE (256M words

8 bits)

Specifications

•

Density: 2G bits

•

Organization



64M words

4 bits

8 banks (EDE2104ABSE)



32M words

8 bits

8 banks (EDE2108ABSE)

•

Package



68-ball FBGA



Lead-free (RoHS compliant)

•

Power supply: VDD, VDDQ

1.8V

0.1V

•

Data rate



800Mbps/667Mbps/533Mbps (max.)

•

1KB page size



Row address: A0 to A14



Column address: A0 to A9, A11 (EDE2104ABSE)

A0 to A9 (EDE2108ABSE)

•

Eight internal banks for concurrent operation

•

Interface: SSTL_18

•

Burst lengths (BL): 4, 8

•

Burst type (BT):



Sequential (4, 8)



Interleave (4, 8)

•

/CAS Latency (CL): 3, 4, 5, 6

•

Precharge: auto precharge option for each burst

access

•

Driver strength: normal/weak

•

Refresh: auto-refresh, self-refresh

Features

•

Double-data-rate architecture; two data transfers per

clock cycle

•

The high-speed data transfer is realized by the 4 bits

prefetch pipelined architecture

•

Bi-directional differential data strobe (DQS and /DQS)

is transmitted/received with data for capturing data at

the receiver

•

DQS is edge-aligned with data for READs; center-

aligned with data for WRITEs

•

Differential clock inputs (CK and /CK)

•

DLL aligns DQ and DQS transitions with CK

transitions

•

Commands entered on each positive CK edge; data

and data mask referenced to both edges of DQS

•

Data mask (DM) for write data

•

Posted /CAS by programmable additive latency for

better command and data bus efficiency

•

Off-Chip-Driver Impedance Adjustment and On-Die-

Termination for better signal quality

•

Programmable RDQS, /RDQS output for making

organization compatible to

4 organization

•

/DQS, (/RDQS) can be disabled for single-ended

Data Strobe operation

•

Refresh cycles: 8192 cycles/64ms



Average refresh period

7.8µs at 0°C

≤

≤ +85°C

3.9µs at

+85°C <

≤ +95°C

•

Operating case temperature range



TC = 0°C to +95°C

Document No. E1196E30 (Ver.3.0)

Date Published December 2008 (K) Japan

Printed in Japan

URL: http://www.elpida.com

Elpida

Memory, Inc. 2007-2008

EDE2104ABSE, EDE2108ABSE

CONTENTS

Specifications.................................................................................................................................................1

Features.........................................................................................................................................................1

Ordering Information......................................................................................................................................2

Part Number ..................................................................................................................................................2

Pin Configurations .........................................................................................................................................3

Electrical Specifications.................................................................................................................................5

Block Diagram .............................................................................................................................................29

Pin Function.................................................................................................................................................30

Command Operation ...................................................................................................................................32

Simplified State Diagram .............................................................................................................................40

Operation of DDR2 SDRAM ........................................................................................................................41

Package Drawing ........................................................................................................................................78

Recommended Soldering Conditions..........................................................................................................79

Data Sheet E1196E30 (Ver. 3.0)

EDE2104ABSE Related Products

	EDE2104ABSE	EDE2108ABSE-8G-E	EDE2108ABSE	EDE2108ABSE-6E-E	EDE2108ABSE-5C-E	EDE2104ABSE-8G-E	EDE2104ABSE-5C-E	EDE2104ABSE-6E-E
Description	2G bits DDR2 SDRAM	2G bits DDR2 SDRAM	2G bits DDR2 SDRAM	2G bits DDR2 SDRAM	2G bits DDR2 SDRAM	2G bits DDR2 SDRAM	2G bits DDR2 SDRAM	2G bits DDR2 SDRAM
Is it Rohs certified?	-	conform to	-	conform to	conform to	conform to	conform to	conform to
Maker	-	ELPIDA	-	ELPIDA	ELPIDA	ELPIDA	ELPIDA	ELPIDA
Parts packaging code	-	BGA	-	BGA	BGA	BGA	BGA	BGA
package instruction	-	TFBGA, BGA68,9X19,32	-	TFBGA, BGA68,9X19,32	TFBGA, BGA68,9X19,32	TFBGA, BGA68,9X19,32	TFBGA, BGA68,9X19,32	TFBGA, BGA68,9X19,32
Contacts	-	68	-	68	68	68	68	68
Reach Compliance Code	-	unknow	-	unknow	unknow	unknow	unknow	unknow
ECCN code	-	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	-	MULTI BANK PAGE BURST	-	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST
Maximum access time	-	0.4 ns	-	0.45 ns	0.5 ns	0.4 ns	0.5 ns	0.45 ns
Other features	-	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	-	400 MHz	-	333 MHz	266 MHz	400 MHz	266 MHz	333 MHz
I/O type	-	COMMON	-	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	-	4,8	-	4,8	4,8	4,8	4,8	4,8
JESD-30 code	-	R-PBGA-B68	-	R-PBGA-B68	R-PBGA-B68	R-PBGA-B68	R-PBGA-B68	R-PBGA-B68
JESD-609 code	-	e1	-	e1	e1	e1	e1	e1
length	-	19 mm	-	19 mm	19 mm	19 mm	19 mm	19 mm
memory density	-	2147483648 bi	-	2147483648 bi	2147483648 bi	2147483648 bi	2147483648 bi	2147483648 bi
Memory IC Type	-	DDR DRAM	-	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	-	8	-	8	8	4	4	4
Number of functions	-	1	-	1	1	1	1	1
Number of ports	-	1	-	1	1	1	1	1
Number of terminals	-	68	-	68	68	68	68	68
word count	-	268435456 words	-	268435456 words	268435456 words	536870912 words	536870912 words	536870912 words
character code	-	256000000	-	256000000	256000000	512000000	512000000	512000000
Operating mode	-	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	-	85 °C	-	85 °C	85 °C	85 °C	85 °C	85 °C
organize	-	256MX8	-	256MX8	256MX8	512MX4	512MX4	512MX4
Output characteristics	-	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	-	TFBGA	-	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	-	BGA68,9X19,32	-	BGA68,9X19,32	BGA68,9X19,32	BGA68,9X19,32	BGA68,9X19,32	BGA68,9X19,32
Package shape	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	-	1.8 V	-	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	-	8192	-	8192	8192	8192	8192	8192
Maximum seat height	-	1.2 mm	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	-	YES	-	YES	YES	YES	YES	YES
Continuous burst length	-	4,8	-	4,8	4,8	4,8	4,8	4,8
Maximum standby current	-	0.015 A	-	0.015 A	0.015 A	0.015 A	0.015 A	0.015 A
Maximum slew rate	-	0.29 mA	-	0.275 mA	0.26 mA	0.29 mA	0.26 mA	0.275 mA
Maximum supply voltage (Vsup)	-	1.9 V	-	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	-	1.7 V	-	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	-	1.8 V	-	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	-	YES	-	YES	YES	YES	YES	YES
technology	-	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	-	OTHER	-	OTHER	OTHER	OTHER	OTHER	OTHER
Terminal form	-	BALL	-	BALL	BALL	BALL	BALL	BALL
Terminal pitch	-	0.8 mm	-	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	-	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	-	10.2 mm	-	10.2 mm	10.2 mm	10.2 mm	10.2 mm	10.2 mm

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