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IRF340R1

Description
Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size63KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric View All

IRF340R1 Overview

Power Field-Effect Transistor, 10A I(D), 400V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRF340R1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
Reach Compliance Codecompliant
ConfigurationSINGLE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.63 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN SILVER COPPER
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
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