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BUX33B

Description
Power Bipolar Transistor, 12A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, METAL, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size28KB,4 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric Compare View All

BUX33B Overview

Power Bipolar Transistor, 12A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, METAL, TO-3, 2 PIN

BUX33B Parametric

Parameter NameAttribute value
MakerTT Electronics plc
package instructionMETAL, TO-3, 2 PIN
Reach Compliance Codecompliant
Shell connectionCOLLECTOR
Maximum collector current (IC)12 A
Collector-emitter maximum voltage500 V
ConfigurationSINGLE
Minimum DC current gain (hFE)6
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
Base Number Matches1
BUX33A
BUX33A
BUX33B
MECHANICAL DATA
Dimensions in mm(inches)
4 0 .0 1 (1 .5 7 5 )
M a x .
HIGH VOLTAGE
HIGH SPEED
HIGH POWER TRANSISTORS
2 6 .6 7
(1 .0 5 0 )
M a x .
4 .4 7 (0 .1 7 6 )
R a d .
2 P ls .
2 2 .2 3 (0 .8 7 5 )
M a x .
1 1 .4 3 (0 .4 5 0 )
6 .3 5 (0 .2 5 0 )
1 .5 7 (0 .0 6 2 )
1 .4 7 (0 .0 5 8 )
D ia .
3 0 .4 0 (1 .1 9 7 )
2 9 .9 0 (1 .1 7 7 )
1 2 .1 9 (0 .4 8 )
1 .6 3 (0 .0 6 4 ) 1 1 .1 8 (0 .4 4 )
1 .5 2 (0 .0 6 0 )
DESCRIPTION
The BUX33 series of silcon NPN power
transistors in modified Jedec TO-3 metal
case, feature high voltage capability, fast
switching speeds and low saturation
voltages.
4 .0 9 (0 .1 6 1 )
3 .8 4 (0 .1 5 1 )
2 P ls
1 1 .1 8 (0 .4 4 0 )
1 0 .6 7 (0 .4 2 0 )

1 6 .9 7 (0 .6 6 8 )
1 6 .8 7 (0 .6 6 4 )
TO–3 PACKAGE (TO-204AA)
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C unless otherwise stated)
V
CEV
V
CER
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg,
T
J
Collector – Emitter Voltage (V
BE
= 1.5V)
Collector – Emitter Voltage (R
BE
= 10Ω)
Collector – Emitter Voltage (V
BE
= -1.5V)
Collector – Emitter Voltage (I
C
= 0)
Emitter– Base Voltage
Collector Current
Maximum Collector Current
Base Current
Total Power Dissipation at T
case
25°C
Maximum Storage and Junction Temperature
BUX33
800V
800V
450V
400V
BUX33A BUX33B
900V
900V
500V
450V
8V
12A
15A
4
150W
–65 to 200°C
1000V
1000V
550V
500V
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3697
Issue 1

BUX33B Related Products

BUX33B BUX33A BUX33
Description Power Bipolar Transistor, 12A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, METAL, TO-3, 2 PIN Power Bipolar Transistor, 12A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, METAL, TO-3, 2 PIN Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, METAL, TO-3, 2 PIN
package instruction METAL, TO-3, 2 PIN METAL, TO-3, 2 PIN FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant compliant compliant
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 12 A 12 A 12 A
Collector-emitter maximum voltage 500 V 450 V 400 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 6 6 6
JEDEC-95 code TO-204AA TO-204AA TO-204AA
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
Number of components 1 1 1
Number of terminals 2 2 2
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 15 MHz 15 MHz 15 MHz
Base Number Matches 1 1 1
Maker TT Electronics plc TT Electronics plc -

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