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BZM55C3V9-TR3

Description
Zener Diode, 3.9V V(Z), 5.1%, 0.5W,
CategoryDiscrete semiconductor    diode   
File Size84KB,6 Pages
ManufacturerVishay Telefunken (Vishay)
Websitehttp://www.vishay.com
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BZM55C3V9-TR3 Overview

Zener Diode, 3.9V V(Z), 5.1%, 0.5W,

BZM55C3V9-TR3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay Telefunken (Vishay)
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance90 Ω
JESD-609 codee0
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation0.5 W
Nominal reference voltage3.9 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Maximum voltage tolerance5.1%
Working test current5 mA
Base Number Matches1
BZM55C...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
D
D
D
D
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BZT55C... / TZMC...
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
96 12315
Applications
Voltage stabilization
Order Instruction
Type
BZM55C2V4
BZM55C2V4
Ordering Code
BZM55C2V4–TR
BZM55C2V4–TR3
Remarks
Tape and Reel (2.500 pcs)
Tape and Reel (10.000 pcs)
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
300K/W
x
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Junction tie point
Test Conditions
mounted on epoxy–glass hard tissue, Fig. 1
35
m
m copper clad, 0.9 mm
2
copper area per electrode
Symbol
R
thJA
R
thJL
Value
500
300
Unit
K/W
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Document Number
Rev. 4, 25-Jun-01
www.vishay.com
1 (6)

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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