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FCX458TA

Description
Small Signal Bipolar Transistor, 0.225A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size14KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric View All

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FCX458TA Overview

Small Signal Bipolar Transistor, 0.225A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN

FCX458TA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.225 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1
SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – OCTOBER 1995
FEATURES
* 400 Volt V
CEO
* P
tot
= 1 Watt
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
FCX558
N58
FCX458
C
E
C
B
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
VALUE
400
400
5
225
500
1
-65 to +150
UNIT
V
V
V
mA
mA
W
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Breakdown Voltages
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
Collector Cut-Off Currents
I
CBO
I
CES
Emitter Cut-Off Current
Emitter Saturation Voltages
I
EBO
V
CE(sat)
V
BE(sat)
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Collector-Base
Breakdown Voltage
Switching times
V
BE(on)
h
FE
100
100
15
50
5
135 Typical
2260 Typical
MIN.
400
400
5
100
100
100
0.2
0.5
0.9
0.9
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=100µA
I
C
=10mA*
I
E
=100µA
V
CB
=320V
V
CE
=320V
V
EB
=4V
I
C
=20mA, I
B
=2mA*
I
C
=50mA, I
B
=6mA*
I
C
=50mA, I
B
=5mA*
I
C
=50mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V**
MHz
pF
ns
ns
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
I
C
=50mA, V
C
=100V
I
B1
=5mA, I
B2
=-10mA
300
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT458 datasheet
3 - 85
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