REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
15
16
17
18
REV
SHEET
PREPARED BY
Charles F. Saffle
1
2
3
4
5
6
7
8
9
10
11
12
13
14
19
20
21
22
23
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
CHECKED BY
Charles F. Saffle
APPROVED BY
Thomas M. Hess
DRAWING APPROVAL DATE
06-07-06
REVISION LEVEL
-
SIZE
A
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
MICROCIRCUIT, DIGITAL, RADIATION
HARDENED, SPACEWIRE PHYSICAL LAYER
TRANSCEIVER, MONOLITHIC SILICON
CAGE CODE
67268
1 OF
23
5962-06232
DSCC FORM 2233
APR 97
5962-E499-06
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)
and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
06232
01
Q
X
A
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
Generic number
UT200SpWPHY01
UT200SpWPHY01
Circuit function
SpaceWire physical layer transceiver
SpaceWire physical layer transceiver,
extended industrial temperature range
1/
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
M
Q or V
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant, non-
JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
See figure 1.
Terminals
28
Package style
Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
__________
1/
Device type 02 has an extended industrial temperature range of -40°C to +125°C.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-06232
SHEET
2
1.3 Absolute maximum ratings.
1/
Supply voltage range (V
DD
)........................................................................................................ -0.3 V dc to 4.0 V dc
Voltage on any pin during operation (V
I/O
) ................................................................................. -0.3 V dc to (V
DD
+ 0.3 V)
Voltage on any pin during cold spare (V
I/O
)................................................................................ -0.3 V dc to 4.0 V dc
DC input current (I
I
) ...................................................................................................................
±10
mA
Maximum power dissipation (P
D
) ............................................................................................... 120 mW
Thermal resistance, junction-to-case (θ
JC
)................................................................................. 10°C/W
Storage temperature range (T
STG
) ............................................................................................. -65°C to +150°C
1.4 Recommended operating conditions.
Supply voltage range (V
DD
)........................................................................................................ 3.0 V dc to 3.6 V dc
DC input voltage range (V
IN
)...................................................................................................... 0 V dc to V
DD
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s) ...............................................
>
100 krads(Si)
2
Single event latchup (SEL) ........................................................................................................
>
110 MeV-cm /mg
2
Single event upset (SEU) saturated cross-section (σ
sat
)............................................................ 2.9E-8 cm /device
Onset single event upset (SEU) linear energy threshold (LET), no upset.................................. 38 MeV-cm
2
/mg
Neutron fluence ......................................................................................................................... 1 x 10
14
neutrons/cm
2
Dose rate upset ......................................................................................................................... 3/
Dose rate survivability................................................................................................................ 3/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
2/
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://assist.daps.dla.mil
or from
the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
__________
1/
2/
3/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
Guaranteed, but not tested.
When characterized as a result of procuring activities request, the condition will be specified.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-06232
SHEET
3
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Truth table. The truth table shall be as specified on figure 3.
3.2.4 Functional block diagram. The functional block diagram shall be as specified on figure 4.
3.2.5 Timing waveforms and test circuit. The timing waveforms and test circuit shall be as specified on figures 5 through 12.
3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full
case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table IA.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and
herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the
option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 77 (see MIL-PRF-38535, appendix A).
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-06232
SHEET
4
TABLE IA. Electrical performance characteristics.
Conditions
Test
Symbol
V
DD
= 3.3 V
±
0.3 V
-55°C
≤
T
C
≤
+125°C
unless otherwise specified
Group A
subgroups
Device
type
Min
DC Electrical Characteristics
High-level input voltage
(CMOS)
Low-level input voltage
(CMOS)
Low-level output voltage
(LVCMOS)
High-level output voltage
(LVCMOS)
Input leakage current
(LVCMOS)
Input leakage current
(LVDS)
Cold spare leakage current
(LVDS pins)
Differential input high
threshold
Differential input low
threshold
Differential output voltage
Change in magnitude of
V
OD
for complimentary
output states
Offset voltage
Change in magnitude of
V
OS
for complimentary
output states
LVDS output three-state
current
Loaded supply current,
drivers enabled
V
IH
V
IL
V
OL
V
OH
I
INCMOS
I
INLVDS
I
CS
V
TH
V
TL
V
OD
∆V
OD
I
OL
= 12mA
I
OH
= -12mA
V
IN
= V
DD
or GND,
V
DD
= 3.6 V
V
IN
= V
DD
or GND,
V
DD
= 3.6 V
V
IN
= 3.6 V,
V
DD
= V
SS
= 0 V
V
CM
= +1.2 V
V
CM
= +1.2 V
R
L
= 100Ω
R
L
= 100Ω
-100
250
400
35
2.4
-10
-20
-20
+10
+20
+20
+100
1/
1, 2, 3
All
2.0
0.8
0.4
V
V
V
V
µA
µΑ
µA
mV
mV
mV
mV
Limits
Unit
Max
V
OS
∆V
OS
RL = 100Ω,
(V
OS
= (V
OH
+ V
OL
)/2)
R
L
= 100Ω
1.125
1.450
25
V
mV
I
OZ
TxOE = GND,
V
OUT
= 0 V or V
DD
,
V
DD
= 3.6 V
R
L
= 100Ω all channels,
running in full duplex
V
IN
= V
DD
or V
SS
(all inputs)
C
L
= 35 pF, f = 200 MHz
-10
+10
µA
I
CCL
120
mA
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-06232
SHEET
5
Embedded System
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