DB610 datasheet, PDF - EEWORLD Datasheet

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DB610: Description3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size392KB，2 Pages; ManufacturerDIOTEC; Websitehttp://www.diotec.com/

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DB610 Overview

3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

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VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM

MECHANICAL STRENGTH AND HEAT DISSIPATION

(Solder Voids: Typical < 2%, Max. < 10% of Die Area)

SURGE OVERLOAD RATING TO 250 AMPS PEAK

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BUILT-IN STRESS RELIEF MECHANISM FOR

SUPERIOR RELIABILITY AND PERFORMANCE

UL RECOGNIZED - FILE #E124962

§¨

Mounting Position: Any. Through hole provided for #6 screw

Polarity: Marked on side of case; positive lead at beveled corner

Soldering: Per MIL-STD 202 Method 208 guaranteed

Terminals: Round silver plated copper pins

Case: Molded Epoxy (UL Flammability Rating 94V-0)

Weight: 0.13 Ounces (3.6 Grams)

RoHS COMPLIANT

PARAMETER (TEST CONDITIONS)

18020 Hobart Blvd., Unit B

Gardena, CA 90248 U.S.A

Tel.: (310) 767-1052 Fax: (310) 767-7958

DIOTEC ELECTRONICS CORP.

MECHANICAL DATA

FEATURES

6 AMP SILICON BRIDGE RECTIFIERS

MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS

SYMBOL

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Maximum DC Blocking Voltage

Series Number

ACTUAL SIZE

Working Peak Reverse Voltage

bcaY

Maximum Peak Recurrent Reverse Voltage

e d

RMS Reverse Voltage

r p i g

qf hf

Power Dissipation in V

Region for 100

S Square Wave

U T

&S R

Continuous Power Dissipation in V

@ T =80 C (Heat Sink Temp)

Region

SYM

Peak Forward Surge Current. Single 60Hz Half-Sine Wave

Superimposed on Rated Load (JEDEC Method). Tc = 60 C

Thermal Energy (Rating for Fusing) t < 8.3mSec

&½ü

Average Forward Rectified Current, T = 60 C (Note 2)

Junction Operating and Storage Temperature Range

T ,T

Minimum Avalanche Voltage

C B9@864 3

A 7 5

Maximum Avalanche Voltage

P H G F

QI§686E D

Maximum Forward Voltage (Per Diode) at 6 Amps DC

Typical Junction Capacitance (Note 4)

Maximum Reverse Current at Rated V

@ T = 25 C

@T = 125 C

Minimum Insulation Breakdown Voltage (Circuit to Case)

Typical Thermal Resistance, Junction to Case (Note 2)

DB602

MILLIMETERS

19.0

1.0

10.3

14.7

MIN

5.8

See Note 5

MECHANICAL SPECIFICATION

MAX

15.7

11.3

n/a

1.1

SERIES DB600 - DB610 and ADB604 - ADB608

6.9

0.75

0.039

0.405

0.23

0.58

MIN

INCHES

n/a

0.042

0.445

0.27

0.62

RATINGS

MAX

Data Sheet No. BRDB-600-1D

ABDB-600-1D

UNITS

WATTS

VOLTS

AMPS

SEC

AMPS

C/W

°C

E25

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DB610 Related Products

	DB610	DB608	DB606	DB602	DB604	DB601	DB600	ADB606	ADB608	ADB604
Description	3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

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