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VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
SURGE OVERLOAD RATING TO 250 AMPS PEAK
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§¥
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
UL RECOGNIZED - FILE #E124962
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Mounting Position: Any. Through hole provided for #6 screw
Polarity: Marked on side of case; positive lead at beveled corner
Soldering: Per MIL-STD 202 Method 208 guaranteed
Terminals: Round silver plated copper pins
Case: Molded Epoxy (UL Flammability Rating 94V-0)
Weight: 0.13 Ounces (3.6 Grams)
RoHS COMPLIANT
PARAMETER (TEST CONDITIONS)
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
MECHANICAL DATA
FEATURES
6 AMP SILICON BRIDGE RECTIFIERS
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
SYMBOL
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Maximum DC Blocking Voltage
Series Number
ACTUAL SIZE
V
t
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Working Peak Reverse Voltage
V
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Maximum Peak Recurrent Reverse Voltage
V
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RMS Reverse Voltage
V
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Power Dissipation in V
Region for 100
m
S Square Wave
P
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Continuous Power Dissipation in V
@ T =80 C (Heat Sink Temp)
Region
SYM
P
n
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method). Tc = 60 C
Thermal Energy (Rating for Fusing) t < 8.3mSec
I
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Average Forward Rectified Current, T = 60 C (Note 2)
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Junction Operating and Storage Temperature Range
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I
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Minimum Avalanche Voltage
V
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Maximum Avalanche Voltage
V
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Maximum Forward Voltage (Per Diode) at 6 Amps DC
V
S
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Typical Junction Capacitance (Note 4)
C
T
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Maximum Reverse Current at Rated V
@ T = 25 C
@T = 125 C
I
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Minimum Insulation Breakdown Voltage (Circuit to Case)
V
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Typical Thermal Resistance, Junction to Case (Note 2)
R
DT
DB602
MILLIMETERS
19.0
1.0
10.3
14.7
MIN
5.8
See Note 5
See Note 5
MECHANICAL SPECIFICATION
MAX
15.7
11.3
n/a
1.1
SERIES DB600 - DB610 and ADB604 - ADB608
6.9
0.75
0.039
0.405
0.23
0.58
_
MIN
INCHES
n/a
0.042
0.445
0.27
0.62
RATINGS
MAX
Data Sheet No. BRDB-600-1D
ABDB-600-1D
+
D1
BH
LL
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BL
D1
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UNITS
WATTS
VOLTS
VOLTS
VOLTS
AMPS
SEC
AMPS
C/W
mA
pF
°C
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DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BRDB-600-2D
ABDB-600-2D
6 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB600 - DB610 and SERIES ADB604 - ADB608
6 5
4
9.0
Average Forward Current, Io
(Amperes)
6.0
4.5
0
0
50
100
150
Temperature, C
FIGURE 1. FORWARD CURRENT DERATING CURVE
Î Î
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Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
100
Instantaneous Forward Current
Amperes
Instantaneous Reverse Current, I
(Microamperes)
100
10
1.0
NOTE 3
0.1
1.0
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
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Percent of Rated Peak Reverse Voltage
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE
NOTES
NOTE 4
(1) Case Temperature, T With Bridge Mounted on 4"Sq. x 0.11" Thick
(10.5cm Sq. x 0.3cm) Aluminum Plate
(2) T = 150 C
(3) T = 25 C; Pulse Width = 300
m
Sec; 1% Duty Cycle
(4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p
50 - 400V
600 - 1000V
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Capacitance, pF
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
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