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DB107

Description
1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size289KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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DB107 Overview

1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

DB107 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage1000 V
Maximum average input current1 A
Processing package descriptionROHS COMPLIANT, PLASTIC, DB-1, 4 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeIN-line
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage1000 V
Maximum non-repetitive peak forward current40 A
DB101 THRU DB107
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
Reverse Voltage – 50 to 1000 V
Forward Current – 1 A
Features
Glass passivated chip junction
Low forward voltage drop
High surge overload rating of 50 A peak
Ideal for printed circuit board
Mechanical Data
Case: Molded plastic, DB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per MIL-STD-202,
method 208 guaranteed
Mounting position: Any
Absolute Maximum Ratings and Characteristics
Ratings at 25
O
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
Parameter
Symbols
DB101 DB102 DB103 DB104 DB105 DB106 DB107 Units
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
at T
A
= 25
O
C
at T
A
= 125
O
C
I
R
C
J
R
θ
JA
R
θ
JL
T
J
,T
S
50
35
50
100
70
100
200
140
200
400
280
400
1
50
1.1
5
500
25
40
15
-55 to +150
O
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T
A
= 40
O
C
Peak Forward Surge Current 8.3 ms Single Half-sine-wave
Superimposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 1 A
Maximum Reverse Current at Rated
DC Blocking Voltage
Typical Junction Capacitance
1)
Typical Thermal Resistance
2)
Typical Thermal Resistance
2)
Operating and Storage Temperature Range
1)
2)
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
µA
pF
C/W
C/W
O
O
C
Measured at 1 MHz and applied reverse voltage of 4 V
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B with 0.5 X 0.5" (13 X 13
mm) copper pads.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated :01/04/2006 H

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DB107 DB106 DB105 DB104 DB103 DB102 DB101
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