EEWORLDEEWORLDEEWORLD

Part Number

Search

DB104

Description
1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size289KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
Download Datasheet Parametric Compare View All

DB104 Online Shopping

Suppliers Part Number Price MOQ In stock  
DB104 - - View Buy Now

DB104 Overview

1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

DB104 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage400 V
Maximum average input current1 A
Processing package descriptionPLASTIC, DB, 4 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeIN-LINE
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Phase1
Maximum repetitive peak reverse voltage400 V
Maximum non-repetitive peak forward current50 A
DB101 THRU DB107
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
Reverse Voltage – 50 to 1000 V
Forward Current – 1 A
Features
Glass passivated chip junction
Low forward voltage drop
High surge overload rating of 50 A peak
Ideal for printed circuit board
Mechanical Data
Case: Molded plastic, DB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per MIL-STD-202,
method 208 guaranteed
Mounting position: Any
Absolute Maximum Ratings and Characteristics
Ratings at 25
O
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
Parameter
Symbols
DB101 DB102 DB103 DB104 DB105 DB106 DB107 Units
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
at T
A
= 25
O
C
at T
A
= 125
O
C
I
R
C
J
R
θ
JA
R
θ
JL
T
J
,T
S
50
35
50
100
70
100
200
140
200
400
280
400
1
50
1.1
5
500
25
40
15
-55 to +150
O
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T
A
= 40
O
C
Peak Forward Surge Current 8.3 ms Single Half-sine-wave
Superimposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 1 A
Maximum Reverse Current at Rated
DC Blocking Voltage
Typical Junction Capacitance
1)
Typical Thermal Resistance
2)
Typical Thermal Resistance
2)
Operating and Storage Temperature Range
1)
2)
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
µA
pF
C/W
C/W
O
O
C
Measured at 1 MHz and applied reverse voltage of 4 V
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B with 0.5 X 0.5" (13 X 13
mm) copper pads.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated :01/04/2006 H

DB104 Related Products

DB104 DB107 DB106 DB105 DB103 DB102 DB101
Description 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 786  1777  2677  2044  1367  16  36  54  42  28 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号