SMD LED LAMP, BI-COLOR
BL-LS1311xx-3
Features:
3.5mmx2.8mm SMD, 1.9mm THICKNESS PLCC4 package
Mono-color type, Ultra brightness, with 3 chips
Compatible with automatic placement equipment
WIDE VIEWING ANGLE.
IDEAL FOR BACKLIGHT AND INDICATOR.
PACKAGE: 2KPCS/REEL
RoHs Compliance
Electrical-optical characteristics: (Ta=25°
C)
Chip
Part Number
Emitted Color
Material
(Test Condition: IF=20mA)
λ
P
(n
m)
Lens
Type
Forward
Voltage(VF)
Unit:V
BL-LS1311UEC-3
BL-LS1311UYO-3
BL-LS1311UYC-3
BL-LS1311UGC-3
BL-LS1311PGC-3
BL-LS1311UBC-3
BL-LS1311UWC-3
Ultra Orange
Ultra Amber
Ultra Yellow
Ultra Green
AlGaAs
AlGaInP
Absolute maximum ratings (Ta=25°
C)
Parameter
w
T
SOL
e
.b
w
w
AlGaInP
AlGaInP
InGaN
Ultra Pure Green
Ultra Blue
InGaN
Ultra White
InGaN
UE
UYO
u
tl
630
610
593
575
Water
Clear
525
470
/
UY
UG
.
x
Typ
2.10
2.10
2.10
2.20
3.50
3.50
3.50
PG
Max
2.50
m
o
c
Min.
400
Typ.
800
300
600
28
700
400
1000
600
800
50
1000
700
1500
Luminous
Intensity
(Iv)
Unit:mcd
Viewi
ng
Angle
2θ1/2
(deg)
2.60
2.60
2.70
4.20
4.20
4.20
120
UB
UW
Unit
-30 to +80
-40 to +85
Max.260 5
for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
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REV NO: V.2
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Lead Soldering Temperature
Forward Current I
F
Power Dissipation P
d
Reverse Voltage V
R
Peak Forward Current I
PF
(Duty 1/10 @1KHZ)
Operation Temperature T
OPR
Storage Temperature T
STG
30
78
5
100
30
78
5
100
30
78
5
100
30
78
5
100
30
78
5
100
30
78
5
100
30
78
5
100
mA
mW
V
mA
SMD LED LAMP, BI-COLOR
BL-LS1311xx-3
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is 0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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Package configuration & Internal circuit diagram
w
e
.b
w
w
u
tl
.
x
m
o
c
SMD LED LAMP, BI-COLOR
BL-LS1311xx-3
1.0
0.5
0
350
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
50
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
3
2
1
0.5
0.2
0.1
-30
-20
-10
1
8
64 5
2 3
4.0
40
30
20
10
0
1.2
3.0
1.6
2.0
2.4
2.6
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
w
0
10
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
AMBIENT TEMPERATURE Ta( )
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
1
5
4
2
3
10
9
8
7
6
5
4
3
2
20
30
40
50
60
70
1
AMBIENT TEMPERATURE Ta( )
1
Ipeak MAX.
IDC MAX.
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
4
3
2
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
10
100
1000
10,000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
NOTE:25
free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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e
.b
w
w
2.0
1.0
0
3.0
20
40
60
u
tl
1
5
B
100
80
§
¥
§
£
Typical electrical-optical characteristics curves:
(A)
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH( p )
.
x
50
40
30
20
10
0
FORWARD CURRENT(mA)
m
o
c
20
40
60
80
100
RELATIVE LUMINOUS INTENSITY
1
6
2,4,8,A
3
5
10,000
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