SMD SILICON PHOTO DIODES
BL-LS1311PD
Features:
3.5mmx2.8mm SMD, 1.9mm THICKNESS PLCC2 package, SILICON PHOTO DIODES
Choice of various viewing angles.
Diffused and Water clear lens are available.
Fast response time.
High photo sensitivity.
Small junction capacitance.
The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitter.
PACKAGE: 2KPCS/REEL.
RoHs Compliance
Items
Wavelength of Peak
Sensitivity
Open Circuit Voltage
Short Circuit Current
w
Symbol
λ
P
V
OC
I
SC
I
L
ID
V
BR
2θ1/2
Tr/T
f
Min.
-
-
-
Reverse Light Current
Reverse Dark Current
Reverse Break down
Voltage
Viewing angle
Rise/Fall Time
-
-
35
-
-
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Electronic Optical Characteristics at Ta=25
Typ.
900
0.40
2
3.5
-
170
120
6/6
Max.
-
-
-
-
10
-
-
-
Unit
nm
V
uA
uA
nA
V
Deg
nS
Condition
-
H=5mW/cm
2
λ
P
=900nm
H=5mW/cm
2
λ
P
=900nm
V
R
=5V
H=0mW/cm2
V
R
=10V
H=0mW/cm2
I
R
=100uA
R
L
=1000
V
R
=10V
¤
Lead Soldering Temperature
TSOL
£
£
Power Dissipation
Reverse Voltage
Operation Temperature
Storage Temperature
¤
e
.b
w
w
P
d
V
R
T
OPR
T
STG
¢
¢
¢
¢
¡
¡
¡
Applications:
High speed photo detector
Camera
Infrared remote controller for TVs VCR, audio equipment, air conditioner, etc.
Absolute Maximum Ratings at Ta=25
Parameter
Symbol
160
35
-40 to +100
-40 to +100
for 3 sec Max.
Max.260±5
(1.6mm from the base of the epoxy bulb)
u
tl
.
x
Rating
m
o
c
Unit
mW
V
SMD SILICON PHOTO DIODES
BL-LS1311PD
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is 0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
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Package configuration & Internal circuit diagram
w
e
.b
w
w
u
tl
.
x
m
o
c