Power Bipolar Transistor, 15A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 3 Pin, TO-220M, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | TT Electronics plc |
| package instruction | TO-220M, 3 PIN |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Maximum collector current (IC) | 15 A |
| Collector-emitter maximum voltage | 120 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 40 |
| JESD-30 code | R-MSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| Guideline | CECC |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 30 MHz |
| Base Number Matches | 1 |
| BDS18CECC | BDS18.MOD | BDS18 | BDS18R1 | |
|---|---|---|---|---|
| Description | Power Bipolar Transistor, 15A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 3 Pin, TO-220M, 3 PIN | Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN | Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN | Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible | incompatible | conform to |
| Maker | TT Electronics plc | TT Electronics plc | TT Electronics plc | TT Electronics plc |
| package instruction | TO-220M, 3 PIN | HERMETIC SEALED, METAL, TO-220M, 3 PIN | FLANGE MOUNT, S-MSFM-P3 | HERMETIC SEALED, METAL, TO-220M, 3 PIN |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 15 A | 8 A | 8 A | 8 A |
| Collector-emitter maximum voltage | 120 V | 120 V | 120 V | 120 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 40 | 15 | 15 | 15 |
| JESD-30 code | R-MSFM-T3 | S-MSFM-P3 | S-MSFM-P3 | S-MSFM-P3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Package body material | METAL | METAL | METAL | METAL |
| Package shape | RECTANGULAR | SQUARE | SQUARE | SQUARE |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | PNP | PNP | PNP | PNP |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | PIN/PEG | PIN/PEG | PIN/PEG |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 30 MHz | 10 MHz | 10 MHz | 10 MHz |
| Other features | - | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| Shell connection | - | ISOLATED | ISOLATED | ISOLATED |
| JEDEC-95 code | - | TO-257AB | TO-257AB | TO-257AB |
| Maximum operating temperature | - | 200 °C | 200 °C | 200 °C |
| transistor applications | - | SWITCHING | SWITCHING | SWITCHING |
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