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BDS18R1

Description
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size516KB,3 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
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BDS18R1 Overview

Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN

BDS18R1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionHERMETIC SEALED, METAL, TO-220M, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
Maximum collector current (IC)8 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-257AB
JESD-30 codeS-MSFM-P3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
BDS18
High Voltage
Hermetic TO220 Isolated Metal Package
Ideally suited for Power Linear, Switching
and general Purpose Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC
75°C
Total Power Dissipation at
Derate Above 75°C
Junction Temperature Range
Storage Temperature Range
-120V
-120V
-5V
-8A
-2A
50W
0.4W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max.
2.5
Units
°C/W
** This datasheet supersedes document 3346
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8667
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com

BDS18R1 Related Products

BDS18R1 BDS18CECC BDS18.MOD BDS18
Description Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN Power Bipolar Transistor, 15A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 3 Pin, TO-220M, 3 PIN Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN
Is it Rohs certified? conform to incompatible incompatible incompatible
Maker TT Electronics plc TT Electronics plc TT Electronics plc TT Electronics plc
package instruction HERMETIC SEALED, METAL, TO-220M, 3 PIN TO-220M, 3 PIN HERMETIC SEALED, METAL, TO-220M, 3 PIN FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 8 A 15 A 8 A 8 A
Collector-emitter maximum voltage 120 V 120 V 120 V 120 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 15 40 15 15
JESD-30 code S-MSFM-P3 R-MSFM-T3 S-MSFM-P3 S-MSFM-P3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material METAL METAL METAL METAL
Package shape SQUARE RECTANGULAR SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form PIN/PEG THROUGH-HOLE PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 10 MHz 30 MHz 10 MHz 10 MHz
Other features HIGH RELIABILITY - HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED - ISOLATED ISOLATED
JEDEC-95 code TO-257AB - TO-257AB TO-257AB
Maximum operating temperature 200 °C - 200 °C 200 °C
transistor applications SWITCHING - SWITCHING SWITCHING

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