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BF583

Description
TRANSISTOR 0.05 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size55KB,2 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BF583 Overview

TRANSISTOR 0.05 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power

BF583 Parametric

Parameter NameAttribute value
MakerNXP
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-based maximum capacity2.5 pF
Collector-emitter maximum voltage250 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-202
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment5 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)70 MHz
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