DRAM Module, 256KX32, 100ns, CMOS, PDIP48, 0.900 INCH, PLASTIC, DIP-48
| Parameter Name | Attribute value |
| Maker | MOSAIC |
| Parts packaging code | DIP |
| package instruction | , |
| Contacts | 48 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Maximum access time | 100 ns |
| Other features | RAS ONLY/CAS BEFORE RAS REFRESH; BYTE WRITE; MULTIPLEXED ADDRESS/DATA BUS |
| JESD-30 code | R-PDIP-T48 |
| memory density | 8388608 bit |
| Memory IC Type | DRAM MODULE |
| memory width | 32 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 48 |
| word count | 262144 words |
| character code | 256000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 256KX32 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Certification status | Not Qualified |
| refresh cycle | 512 |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| Base Number Matches | 1 |
| MD32256FKXI-10/AD4 | MD32256FKXI-15/AD5 | MD32256FKX-15/AD7 | MD32256FKX-15/AD5 | MD32256FKXI-15/AD7 | MD32256FKX-10/AD7 | MD32256FKXI-10/AD7 | MD32256FKXI-15/AD4 | |
|---|---|---|---|---|---|---|---|---|
| Description | DRAM Module, 256KX32, 100ns, CMOS, PDIP48, 0.900 INCH, PLASTIC, DIP-48 | DRAM Module, 256KX32, 150ns, CMOS, PDIP48, 0.900 INCH, PLASTIC, DIP-48 | DRAM Module, 256KX32, 150ns, CMOS, PDIP48, 0.900 INCH, PLASTIC, DIP-48 | DRAM Module, 256KX32, 150ns, CMOS, PDIP48, 0.900 INCH, PLASTIC, DIP-48 | DRAM Module, 256KX32, 150ns, CMOS, PDIP48, 0.900 INCH, PLASTIC, DIP-48 | DRAM Module, 256KX32, 100ns, CMOS, PDIP48, 0.900 INCH, PLASTIC, DIP-48 | DRAM Module, 256KX32, 100ns, CMOS, PDIP48, 0.900 INCH, PLASTIC, DIP-48 | DRAM Module, 256KX32, 150ns, CMOS, PDIP48, 0.900 INCH, PLASTIC, DIP-48 |
| Parts packaging code | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| Contacts | 48 | 48 | 48 | 48 | 48 | 48 | 48 | 48 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum access time | 100 ns | 150 ns | 150 ns | 150 ns | 150 ns | 100 ns | 100 ns | 150 ns |
| Other features | RAS ONLY/CAS BEFORE RAS REFRESH; BYTE WRITE; MULTIPLEXED ADDRESS/DATA BUS | RAS ONLY/CAS BEFORE RAS REFRESH; BYTE WRITE; MULTIPLEXED ADDRESS/DATA BUS | RAS ONLY/CAS BEFORE RAS REFRESH; BYTE WRITE; MULTIPLEXED ADDRESS/DATA BUS | RAS ONLY/CAS BEFORE RAS REFRESH; BYTE WRITE; MULTIPLEXED ADDRESS/DATA BUS | RAS ONLY/CAS BEFORE RAS REFRESH; BYTE WRITE; MULTIPLEXED ADDRESS/DATA BUS | RAS ONLY/CAS BEFORE RAS REFRESH; BYTE WRITE; MULTIPLEXED ADDRESS/DATA BUS | RAS ONLY/CAS BEFORE RAS REFRESH; BYTE WRITE; MULTIPLEXED ADDRESS/DATA BUS | RAS ONLY/CAS BEFORE RAS REFRESH; BYTE WRITE; MULTIPLEXED ADDRESS/DATA BUS |
| JESD-30 code | R-PDIP-T48 | R-PDIP-T48 | R-PDIP-T48 | R-PDIP-T48 | R-PDIP-T48 | R-PDIP-T48 | R-PDIP-T48 | R-PDIP-T48 |
| memory density | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit |
| Memory IC Type | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE |
| memory width | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 48 | 48 | 48 | 48 | 48 | 48 | 48 | 48 |
| word count | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
| character code | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C | 85 °C | 70 °C | 70 °C | 85 °C | 70 °C | 85 °C | 85 °C |
| Minimum operating temperature | -40 °C | -40 °C | - | - | -40 °C | - | -40 °C | -40 °C |
| organize | 256KX32 | 256KX32 | 256KX32 | 256KX32 | 256KX32 | 256KX32 | 256KX32 | 256KX32 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 512 | 512 | 512 | 512 | 512 | 512 | 512 | 512 |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Maker | MOSAIC | MOSAIC | - | MOSAIC | MOSAIC | MOSAIC | MOSAIC | MOSAIC |
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