Philips Semiconductors
Product specification
Inverter
FEATURES
•
Wide supply voltage range from 2.0 to 6.0 V
•
Symmetrical output impedance
•
High noise immunity
•
Low power dissipation
•
Balanced propagation delays
•
Very small 5 pins package
•
Output capability: standard.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
6.0 ns.
DESCRIPTION
74HC1G04; 74HCT1G04
The 74HC1G/HCT1G04 is a high-speed Si-gate CMOS
device.
The 74HC1G/HCT1G04 provides the inverting buffer. The
standard output currents are half the values compared to
the 74HC/HCT04.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs.
2. For HC1G the condition is V
I
= GND to V
CC
.
For HCT1G the condition is V
I
= GND to V
CC
−
1.5 V.
FUNCTION TABLE
See note 1.
INPUT
A
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
OUTPUT
Y
H
L
PARAMETER
propagation delay A to Y
input capacitance
power dissipation capacitance
notes 1 and 2
CONDITIONS
HC1G
C
L
= 15 pF; V
CC
= 5 V
7
1.5
16
HCT1G
8
1.5
18
ns
pF
pF
UNIT
2002 May 17
2
Philips Semiconductors
Product specification
Inverter
RECOMMENDED OPERATING CONDITIONS
74HC1G04
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall times
see DC and AC
characteristics per
device
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
CONDITIONS
MIN.
2.0
0
0
−40
TYP.
5.0
−
−
+25
74HC1G04; 74HCT1G04
74HCT1G04
UNIT
MIN.
4.5
0
0
−40
TYP.
5.0
−
−
+25
MAX.
5.5
V
CC
V
CC
+125
V
V
V
°C
MAX.
6.0
V
CC
V
CC
+125
t
r
, t
f
−
−
−
−
−
−
1000
500
400
−
−
−
−
−
−
−
500
−
ns
ns
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55
°C
the value of P
D
derates linearly with 2.5 mW/K.
PARAMETER
supply voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation per package
for temperature range from
−40
to +125
°C;
note 2
V
I
< −0.5
V or V
I
>
V
CC
+ 0.5 V; note 1
V
O
< −0.5
V or V
O
>
V
CC
+ 0.5 V; note 1
−0.5
V
<
V
O
<
V
CC
+
0.5 V; note 1
note 1
CONDITIONS
MIN.
−0.5
−
−
−
−
−65
−
MAX.
+7.0
±20
±20
±12.5
±25
+150
200
UNIT
V
mA
mA
mA
mA
°C
mW
2002 May 17
4
Philips Semiconductors
Product specification
Inverter
DC CHARACTERISTICS
74HC1G04; 74HCT1G04
Family 74HC1G04
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
OTHER
V
IH
HIGH-level input voltage
V
CC
(V)
2.0
4.5
6.0
V
IL
LOW-level input voltage
2.0
4.5
6.0
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
=
−20 µA
V
I
= V
IH
or V
IL
;
I
O
=
−20 µA
V
I
= V
IH
or V
IL
;
I
O
=
−20 µA
V
I
= V
IH
or V
IL
;
I
O
=
−2.0
mA
V
I
= V
IH
or V
IL
;
I
O
=
−2.6
mA
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
= 20
µA
V
I
= V
IH
or V
IL
:
I
O
=
−20 µA
V
I
= V
IH
or V
IL
:
I
O
=
−20 µA
V
I
= V
IH
or V
IL
;
I
O
= 2.0 mA
V
I
= V
IH
or V
IL
;
I
O
= 2.6 mA
I
LI
I
CC
Note
1. All typical values are measured at T
amb
= 25
°C.
input leakage current
quiescent supply
current
V
I
= V
CC
or GND
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
MIN.
1.5
3.15
4.2
−
−
−
1.9
4.4
5.9
4.13
5.63
−
−
−
−
−
−
−
T
amb
(°C)
−40
to +85
TYP.
(1)
1.2
2.4
3.2
0.8
2.1
2.8
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
−
−
MAX.
−
−
−
0.5
1.35
1.8
−
−
−
−
−
0.1
0.1
0.1
0.33
0.33
1.0
10
−40
to +125
MIN.
1.5
3.15
4.2
−
−
−
1.9
4.4
5.9
3.7
5.2
−
−
−
−
−
−
−
MAX.
−
−
−
0.5
1.35
1.8
−
−
−
−
−
0.1
0.1
0.1
0.4
0.4
1.0
20
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
UNIT
V
I
= V
CC
or GND; 6.0
I
O
= 0
2002 May 17
5
MCU
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