LMUN5330DW1T1G datasheet, PDF - EEWORLD Datasheet

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LMUN5330DW1T1G: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon,; CategoryDiscrete semiconductor The transistor; File Size420KB，29 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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LMUN5330DW1T1G Overview

Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon,

LMUN5330DW1T1G Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	,
Reach Compliance Code	unknown
Is Samacsys	N
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	3
Number of components	2
Polarity/channel type	NPN/PNP
Maximum power dissipation(Abs)	0.385 W
surface mount	YES
Transistor component materials	SILICON
Base Number Matches	1

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LESHAN RADIO COMPANY, LTD.

Dual Bias Resistor Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-

sistors are designed to replace a single device and its external resistor bias network. The BRT

eliminates these individual components by integrating them into a single device. In the

LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package

which is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Pb-Free Package is available

LMUN5311DW1T1

Series

SOT-363/SC-88

MAXIMUM RATINGS

= 25°C unless otherwise noted, common for Q

and Q

, – minus sign for Q

(PNP) omitted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation

= 25°C

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

Characteristic

(Both Junctions Heated)

Total Device Dissipation

= 25°C

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

Junction and Storage

Temperature

1. FR–4 @ Minimum Pad

Symbol Value

CBO

CEO

100

Unit

Vdc

mAdc

Symbol

Max

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

Unit

mW/°C

°C/W

MARKING DIAGRAM

θJA

670 (Note 1.)

490 (Note 2.)

xx = Device Marking

(See Page 2)

Symbol

Max

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

Unit

mW/°C

°C/W

°C

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

θJA

θJL

, T

stg

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

–55 to +150

2. FR–4 @ 1.0 x 1.0 inch Pad

LMUN5311DW–1/29

LMUN5330DW1T1G Related Products

	LMUN5330DW1T1G	LMUN5330DW1T1	LMUN5334DW1T1G	LMUN5334DW1T1	LMUN5335DW1T1G	LMUN5335DW1T1	LMUN5314DW1T1G	LMUN5314DW1T1
Description	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon
Maker	LRC	LRC	LRC	LRC	LRC	LRC	LRC	LRC
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Is Samacsys	N	N	N	N	N	N	N	N
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Minimum DC current gain (hFE)	3	3	80	80	80	80	80	80
Number of components	2	2	2	2	2	2	2	2
Polarity/channel type	NPN/PNP	NPN/PNP	NPN/PNP	NPN/PNP	NPN/PNP	NPN/PNP	NPN/PNP	NPN/PNP
Maximum power dissipation(Abs)	0.385 W	0.385 W	0.385 W	0.385 W	0.385 W	0.385 W	0.385 W	0.385 W
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1	1	1

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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