LMUN5335DW1T1 datasheet, PDF - EEWORLD Datasheet

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LMUN5335DW1T1: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon; CategoryDiscrete semiconductor The transistor; File Size420KB，29 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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LMUN5335DW1T1 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon

LMUN5335DW1T1 Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	,
Reach Compliance Code	unknown
Is Samacsys	N
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	80
Number of components	2
Polarity/channel type	NPN/PNP
Maximum power dissipation(Abs)	0.385 W
surface mount	YES
Transistor component materials	SILICON
Base Number Matches	1

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LESHAN RADIO COMPANY, LTD.

Dual Bias Resistor Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-

sistors are designed to replace a single device and its external resistor bias network. The BRT

eliminates these individual components by integrating them into a single device. In the

LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package

which is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Pb-Free Package is available

LMUN5311DW1T1

Series

SOT-363/SC-88

MAXIMUM RATINGS

= 25°C unless otherwise noted, common for Q

and Q

, – minus sign for Q

(PNP) omitted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation

= 25°C

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

Characteristic

(Both Junctions Heated)

Total Device Dissipation

= 25°C

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

Junction and Storage

Temperature

1. FR–4 @ Minimum Pad

Symbol Value

CBO

CEO

100

Unit

Vdc

mAdc

Symbol

Max

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

Unit

mW/°C

°C/W

MARKING DIAGRAM

θJA

670 (Note 1.)

490 (Note 2.)

xx = Device Marking

(See Page 2)

Symbol

Max

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

Unit

mW/°C

°C/W

°C

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

θJA

θJL

, T

stg

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

–55 to +150

2. FR–4 @ 1.0 x 1.0 inch Pad

LMUN5311DW–1/29

LMUN5335DW1T1 Related Products

	LMUN5335DW1T1	LMUN5330DW1T1	LMUN5330DW1T1G	LMUN5334DW1T1G	LMUN5334DW1T1	LMUN5335DW1T1G	LMUN5314DW1T1G	LMUN5314DW1T1
Description	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon
Maker	LRC	LRC	LRC	LRC	LRC	LRC	LRC	LRC
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Is Samacsys	N	N	N	N	N	N	N	N
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Minimum DC current gain (hFE)	80	3	3	80	80	80	80	80
Number of components	2	2	2	2	2	2	2	2
Polarity/channel type	NPN/PNP	NPN/PNP	NPN/PNP	NPN/PNP	NPN/PNP	NPN/PNP	NPN/PNP	NPN/PNP
Maximum power dissipation(Abs)	0.385 W	0.385 W	0.385 W	0.385 W	0.385 W	0.385 W	0.385 W	0.385 W
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1	1	1

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