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LMUN5334DW1T1G

Description
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size420KB,29 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric Compare View All

LMUN5334DW1T1G Overview

Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon,

LMUN5334DW1T1G Parametric

Parameter NameAttribute value
MakerLRC
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)80
Number of components2
Polarity/channel typeNPN/PNP
Maximum power dissipation(Abs)0.385 W
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-
sistors are designed to replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single device. In the
LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package
which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb-Free Package is available
1
2
3
LMUN5311DW1T1
Series
6
5
4
SOT-363/SC-88
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
6
5
4
and Q
2
, – minus sign for Q
1
(PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature
1. FR–4 @ Minimum Pad
Symbol Value
50
V
CBO
50
V
CEO
100
I
C
Unit
Vdc
Vdc
mAdc
Q
2
R
2
R
1
1
2
R
1
R
2
Q
1
3
Symbol
P
D
Max
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
Unit
mW
mW/°C
°C/W
MARKING DIAGRAM
6
5
4
XX
1
2
3
R
θJA
670 (Note 1.)
490 (Note 2.)
xx = Device Marking
=
(See Page 2)
Symbol
P
D
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
Unit
mW
mW/°C
°C/W
°C/W
°C
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
R
θJA
R
θJL
T
J
, T
stg
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
–55 to +150
2. FR–4 @ 1.0 x 1.0 inch Pad
LMUN5311DW–1/29

LMUN5334DW1T1G Related Products

LMUN5334DW1T1G LMUN5330DW1T1 LMUN5330DW1T1G LMUN5334DW1T1 LMUN5335DW1T1G LMUN5335DW1T1 LMUN5314DW1T1G LMUN5314DW1T1
Description Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon, Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon, Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon, Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon, Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon
Maker LRC LRC LRC LRC LRC LRC LRC LRC
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
Is Samacsys N N N N N N N N
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Minimum DC current gain (hFE) 80 3 3 80 80 80 80 80
Number of components 2 2 2 2 2 2 2 2
Polarity/channel type NPN/PNP NPN/PNP NPN/PNP NPN/PNP NPN/PNP NPN/PNP NPN/PNP NPN/PNP
Maximum power dissipation(Abs) 0.385 W 0.385 W 0.385 W 0.385 W 0.385 W 0.385 W 0.385 W 0.385 W
surface mount YES YES YES YES YES YES YES YES
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1 1 1
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