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MRF3106

Description
RF Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, L Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size151KB,3 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MRF3106 Overview

RF Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, L Band, Silicon, NPN

MRF3106 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)0.8 A
Collector-based maximum capacity5.5 pF
Collector-emitter maximum voltage22 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
highest frequency bandL BAND
JESD-30 codeO-CRDB-F4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Minimum power gain (Gp)8 dB
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

MRF3106 Related Products

MRF3106 MRF3105 MRF3104
Description RF Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, L Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, L Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, L Band, Silicon, NPN
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.8 A 0.4 A 0.4 A
Collector-based maximum capacity 5.5 pF 3.5 pF 1.5 pF
Collector-emitter maximum voltage 22 V 22 V 22 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 20 20
highest frequency band L BAND L BAND L BAND
JESD-30 code O-CRDB-F4 O-CRDB-F4 O-CRDB-F4
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 4 4 4
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Polarity/channel type NPN NPN NPN
Minimum power gain (Gp) 8 dB 9 dB 10.5 dB
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form FLAT FLAT FLAT
Terminal location RADIAL RADIAL RADIAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
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