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MRF3104

Description
RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, L Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size151KB,3 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MRF3104 Overview

RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, L Band, Silicon, NPN

MRF3104 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
Reach Compliance Codeunknown
Maximum collector current (IC)0.4 A
Collector-based maximum capacity1.5 pF
Collector-emitter maximum voltage22 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
highest frequency bandL BAND
JESD-30 codeO-CRDB-F4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeNPN
Minimum power gain (Gp)10.5 dB
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

MRF3104 Related Products

MRF3104 MRF3106 MRF3105
Description RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, L Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, L Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, L Band, Silicon, NPN
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.4 A 0.8 A 0.4 A
Collector-based maximum capacity 1.5 pF 5.5 pF 3.5 pF
Collector-emitter maximum voltage 22 V 22 V 22 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 20 20
highest frequency band L BAND L BAND L BAND
JESD-30 code O-CRDB-F4 O-CRDB-F4 O-CRDB-F4
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 4 4 4
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Polarity/channel type NPN NPN NPN
Minimum power gain (Gp) 10.5 dB 8 dB 9 dB
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form FLAT FLAT FLAT
Terminal location RADIAL RADIAL RADIAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Maker Motorola ( NXP ) - Motorola ( NXP )
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
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