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BC182RL1

Description
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size134KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BC182RL1 Overview

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN

BC182RL1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionTO-226AA, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)80
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)225
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
ON Semiconductort
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
BC182
50
60
6.0
100
350
2.8
1.0
8.0
–55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
BC182
BC182A
BC182B
1
mW
mW/°C
Watts
mW/°C
°C
2
3
CASE 29–11, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
357
125
Unit
°C/W
°C/W
2
BASE
COLLECTOR
1
3
EMITTER
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 2.0 mA, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 100
mA,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 50 V, V
BE
= 0)
Emitter–Base Leakage Current
(V
EB
= 4.0 V, I
C
= 0)
V
(BR)CEO
50
V
(BR)CBO
60
V
(BR)EBO
I
CBO
I
EBO
0.2
15
15
nA
6.0
V
nA
V
V
©
Semiconductor Components Industries, LLC, 2001
190
May, 2001 – Rev. 2
Publication Order Number:
BC182/D
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