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LDTA143ELT3G

Description
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size226KB,3 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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LDTA143ELT3G Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon,

LDTA143ELT3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)30
Number of components1
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
3
LDTA143ELT1G
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
.
4) Higher mounting densities can be achieved.
We declare that the material of product compliance with
RoHS requirements.
1
BASE
1
2
SOT–23
R1
R2
3
COLLECTOR
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
V
CC
V
IN
I
O
I
C(Max.)
P
D
Tj
Tstg
Limits
−50
−30
to
+10
−100
−100
200
150
55 to
+150
Unit
V
V
mA
mW
°C
°C
2
EMITTER
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
DEVICE MARKING AND RESISTOR VALUES
Device
LDTA143ELT1G
LDTA143ELT3G
Marking
A6J
A6J
R1 (K)
4.7
4.7
R2 (K)
4.7
4.7
Shipping
3000/Tape & Reel
10000/Tape & Reel
External characteristics
(Unit: mm)
Parameter
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
Min.
−3
30
3.29
0.8
Typ.
−0.1
4.7
1
250
Max.
−0.5
−0.3
−1.8
−0.5
6.11
1.2
Unit
V
V
mA
µA
kΩ
MHz
Conditions
V
CC
=−5V,
I
O
=−100µA
V
O
=−0.3V,
I
O
=−20mA
I
O
/I
I
=−10mA/−0.5mA
V
I
=−5V
V
CC
=−50V,
V
I
=0V
V
O
=−5V,
I
O
=−10mA
V
CE
=−10V,
I
E
=5mA,
f=100MHz
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
1/3

LDTA143ELT3G Related Products

LDTA143ELT3G LDTA143ELT1G
Description Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon,
Is it Rohs certified? conform to conform to
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A
Minimum DC current gain (hFE) 30 30
Number of components 1 1
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.2 W 0.2 W
surface mount YES YES
Transistor component materials SILICON SILICON
Base Number Matches 1 1

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