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NE76100

Description
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-5
CategoryDiscrete semiconductor    The transistor   
File Size51KB,8 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric Compare View All

NE76100 Overview

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-5

NE76100 Parametric

Parameter NameAttribute value
package instructionDIE-5
Reach Compliance Codeunknown
Other featuresLOW NOISE, HIGH RELIABILITY
ConfigurationSINGLE
Minimum drain-source breakdown voltage5 V
Maximum drain current (ID)0.1 A
FET technologyMETAL SEMICONDUCTOR
highest frequency bandX BAND
JESD-30 codeR-XUUC-N5
Number of components1
Number of terminals5
Operating modeDEPLETION MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)12 dB
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1
GENERAL PURPOSE
GaAs MESFET
FEATURES
Optimum Noise Figure, NF
OPT
(dB)
NE76100
• LOW NOISE FIGURE:
NF = 0.8 dB typical at f = 4 GHz
• HIGH ASSOCIATED GAIN:
G
A
= 12.0 dB typical at f = 4 GHz
• L
G
= 1.0
µm,
W
G
= 400
µm
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 3 V, I
DS
= 10 mA
4
3.5
3
2.5
2
1.5
1
NF
0.5
0
1
10
20
3
0
24
21
18
15
12
9
6
Ga
DESCRIPTION
NE76100 is a high performance gallium arsenide metal semi-
conductor field effect transistor chip. Its low noise figure makes
this device appropriate for use in the second or third stages of
low noise amplifiers operating in the 1-12 GHz frequency
range. The device is fabricated using ion implantation for
improved RF and DC performance, reliability, and uniformity.
The NE76100 is suitable for a wide variety of commercial and
industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
OPT
1
G
A
1
P
1dB
PARAMETERS AND CONDITIONS
Noise Figure at V
DS
= 3 V, I
D
= 10 mA, f = 4 GHz
Associated Gain at V
DS
= 3 V, I
D
= 10 mA, f = 4 GHz
Output Power at 1 dB Gain Compression Point, f = 4 GHz
V
DS
= 3 V, I
DS
= 10 mA
V
DS
= 3 V, I
DS
= 30 mA
Gain at P
1dB
, f = 4 GHz
V
DS
= 3 V, I
DS
= 10 mA
V
DS
= 3 V, I
DS
= 30 mA
Saturated Drain Current at V
DS
= 3 V, V
GS
= 0
Pinch Off Voltage at V
DS
= 3 V, I
D
= 100
mA
Transconductance at V
DS
= 3 V, I
D
= 10 mA
Gate to Source Leak Current at V
GS
= -5 V
Thermal Resistance
UNITS
dB
dB
dBm
dBm
dB
dB
mA
V
mS
µA
°C/W
30
-3.0
20
MIN
NE76100
00 (CHIP)
TYP
0.8
12.0
12.5
15.0
11.5
13.5
60
-1.1
45
1.0
10
190
100
-0.5
MAX
1.4
G
1dB
I
DSS
V
P
g
m
I
GSO
R
TH2
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects
for 10 samples.
2. Chip mounted on an infinite heat sink.
California Eastern Laboratories
Associated Gain, G
A
(dB)

NE76100 Related Products

NE76100 NE76100N NE76100M
Description RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-5 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-5 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-5
package instruction DIE-5 DIE-5 DIE-5
Reach Compliance Code unknown unknown unknown
Other features LOW NOISE, HIGH RELIABILITY LOW NOISE, HIGH RELIABILITY LOW NOISE, HIGH RELIABILITY
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 5 V 5 V 5 V
Maximum drain current (ID) 0.1 A 0.06 A 0.1 A
FET technology METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR
highest frequency band X BAND X BAND X BAND
JESD-30 code R-XUUC-N5 R-XUUC-N5 R-XUUC-N5
Number of components 1 1 1
Number of terminals 5 5 5
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form UNCASED CHIP UNCASED CHIP UNCASED CHIP
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location UPPER UPPER UPPER
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE
Base Number Matches 1 1 1

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