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BDC02D18

Description
500mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size25KB,1 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BDC02D18 Overview

500mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR

BDC02D18 Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-based maximum capacity30 pF
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power consumption environment2.5 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
VCEsat-Max0.7 V
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