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ZXMD63N02XTC

Description
Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-187AA, MSOP-8
CategoryDiscrete semiconductor    The transistor   
File Size162KB,8 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZXMD63N02XTC Overview

Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-187AA, MSOP-8

ZXMD63N02XTC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionMSOP-8
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW THRESHOLD
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)2.4 A
Maximum drain-source on-resistance0.13 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-187AA
JESD-30 codeS-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
ZXMD63N02X
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package

APPLICATIONS
DC - DC Converters

Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXMD63N02XTA
ZXMD63N02XTC
REEL SIZE
(inches)
7
13
TAPE WIDTH (mm)
12mm embossed
12mm embossed
QUANTITY
PER REEL
1000 units
4000 units
Top View
DEVICE MARKING
ZXM63N02

PROVISIONAL ISSUE A - JUNE 1999
25

SUMMARY
V
(BR)DSS
=20V; R
DS(ON)
=0.13
DSS
I
D
=2.4A
MSOP8








ZXMD63N02XTC Related Products

ZXMD63N02XTC ZXMD63N02XTA
Description Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-187AA, MSOP-8 Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-187AA, MSOP-8
Is it Rohs certified? conform to conform to
package instruction MSOP-8 MSOP-8
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features LOW THRESHOLD LOW THRESHOLD
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V
Maximum drain current (ID) 2.4 A 2.4 A
Maximum drain-source on-resistance 0.13 Ω 0.13 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code MO-187AA MO-187AA
JESD-30 code S-PDSO-G8 S-PDSO-G8
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape SQUARE SQUARE
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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