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NP88N03KDG

Description
Power Field-Effect Transistor, 88A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size152KB,7 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

NP88N03KDG Overview

Power Field-Effect Transistor, 88A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZP, 3 PIN

NP88N03KDG Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionMP-25ZP, 3 PIN
Reach Compliance Codecompliant
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)88 A
Maximum drain-source on-resistance0.0039 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)352 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N03KDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP88N03KDG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP88N03KDG
PACKAGE
TO-263 (MP-25ZK)
FEATURES
Channel temperature 175 degree rating
Super low on-state resistance
R
DS(on)1
= 2.4 mΩ MAX. (V
GS
= 10 V, I
D
= 44 A)
R
DS(on)2
= 3.9 mΩ MAX. (V
GS
= 4.5 V, I
D
= 44 A)
Low C
iss
: C
iss
= 9000 pF TYP. (V
DS
= 25 V)
4.5 V gate drive type
(TO-263)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±20
±88
±352
1.8
200
175
−55
to +175
59
348
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
I
AR
E
AR
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
T
ch
150°C, V
DD
= 15 V, R
G
= 25
Ω,
V
GS
= 20
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
0.75
83.3
°C/W
°C/W
Channel to Ambient Thermal Resistance R
th(ch-A)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17404EJ3V0DS00 (3rd edition)
Date Published April 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2004
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