T
anceram
®
c
hip
c
apaciTors
TANCERAM
®
chip capacitors can replace tantalum capacitors
in many applications and offer several key advantages over
traditional tantalums. Because Tanceram
®
capacitors exhibit
extremely low ESR, equivalent circuit performance can often
be achieved using considerably lower capacitance values.
Low DC leakage reduces current drain, extending the battery
life of portable products. Tancerams
®
high DC breakdown
voltage ratings offer improved reliability and eliminate large
voltage de-rating common when designing with tantalums.
A
dvANtAges
•
•
•
•
Low ESR
Higher Surge Voltage
Reduced CHIP Size
Higher Insulation Resistance
•
•
•
•
Low DC Leakage
Non-polarized Devices
Improved Reliability
Higher Ripple Current
A
ppliCAtioNs
• Switching Power Supply Smoothing (Input/Output)
• DC/DC Converter Smoothing (Input/Output)
• Backlighting Inverters
• General Digital Circuits
Typical ESR Comparison
10
100%
Typical Breakdown Voltage Comparison
1.0
µF
/ 16V
Tantalum
1.0
µF
/ 16V Tantalum
% Distribution
ESR (Ohms)
1
75%
50%
1.0
µF
/ 16V TANCERAM
0.1
1.0
µF
/ 16V TANCERAM
25%
0.01
0.001
0.01
0.1
1
10
100
0%
0
100
200
300
400
500
Frequency (MHz)
DC Breakdown Voltage
H
ow to
o
rder
tANCerAM
®
250
VOLTAGE
500 = 50 V
250 = 25 V
160 = 16 V
100 = 10 V
6R3 = 6.3 V
R18
CASE SIZE
See Chart
Y
DIELECTRIC
W = X7R
X = X5R
Y = Y5V
105
CAPACITANCE
1st two digits are
significant; third digit
denotes number of
zeros.
474 = 0.47 µF
105 = 1.00 µF
Z
TOLERANCE
Y5V
Z = +80% -20%
X7R/X5R
K = ±10%
M = ±20%
V
TERMINATION
V = Ni barrier w/
100% Sn Plating
MARKING
4 = Unmarked
4
E
TAPE MODIFIER
Code Type Reel
E
Plastic 7”
T
Paper
7”
Tape specifications
conform to EIA RS481
P/N written: 250R18Y105ZV4E
14
www.johanson dielectrics.com
T
anceram
®
c
hip
c
apaciTors
C
ApACitANCe
s
eleCtioN
.047
pF
0.10
µF
0.22
µF
0.33
µF
0.47
µF
C
Ase
s
ize
0402
R07
0603
R14
0805
R15
1206
R18
1210
S41
1812
S43
L
W
T
E/B
Inches
.040 ±.004
.020 ±.004
.025 Max.
.008 ±.004
Inches
.063 ±.008
.032 ±.008
.035 Max.
.010±.005
Inches
.080 ±.010
.050 ±.010
.060 Max.
.020±.010
(mm)
(1.02 ±.10)
(0.51 ±.10)
(0.64)
(0.20±.10)
(mm)
(1.60 ±.20)
(0.81 ±.20)
(0.89)
(.25±.13)
(mm)
(2.03 ±.25)
(1.27 ±.25)
(1.52)
(0.51±.25 )
L
W
T
E/B
L
W
T
E/B
Inches
(mm)
(3.17 ±.25)
L .125 ±.010
(1.57 ±.25)
W .062 ±.010
.070 Max.
(1.78)
T
E/B .020 +.015-0.10 (0.51+.38-.25)
Inches
(mm)
(3.18 ±.25)
L .125 ±.010
(2.41 ±.25)
W .095 ±.010
.110 Max.
(2.8)
T
E/B .020 +.015-0.10 (0.51+.38-.25)
Inches
.175 ±.010
.125 ±.010
.110 Max.
.035±.020
.140 Max.
(mm)
(4.45 ±.25)
(3.17 ±.25)
(2.8)
(0.89±.51)
(3.55)
L
W
T
E/B
*
T
50 V
25 V
16 V
10 V
6.3 V
50 V
25 V
16 V
10 V
6.3 V
50 V
25 V
16 V
10 V
6.3 V
50 V
25 V
16 V
10 V
6.3 V
50 V
25 V
16 V
10 V
6.3 V
50 V
25 V
16 V
10 V
6.3 V
DIELECTRIC
X7R
X5R
Y5V
W
L
T
E/B
e
leCtriCAl
C
HArACteristiCs
X7R
Temperature Coefficient:
Dissipation Factor:
Insulation Resistance
(Min. @ 25°C, WVDC)
Dielectric Strength:
Test Conditions:
Other:
±15% (-55 to +125°C)
For
≥
50 VDC: 5% max.
For
≤
25 VDC: 10% max.
X5R
±15% (-55 to +85°C)
For
≥
50 VDC: 5% max.
For
≤
25 VDC: 10% max.
500
ΩF
or 10 GΩ, whichever is less
2.5 X WVDC, 25°C, 50mA max.
Capacitance values
≤
22 µF: 1.0kHz±50Hz @ 1.0±0.2 Vrms
Capacitance values > 22 µF: 120Hz±10Hz @ 0.5V±0.1 Vrms
See page 20 for additional dielectric specifications.
Y5V
+22%, -82% (-30 to +85°C)
For
≥
10 VDC: 16% max.
For 6.3 VDC: 20% max.
www.johanson dielectrics.com
100
µF
1.0
µF
2.2
µF
3.3
µF
4.7
µF
10 µ
F
22 µ
F
47 µ
F
*
15
Renesas Electronics MCUs
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