M5M51T08AP-55SL datasheet, PDF

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M5M51T08AP-55SL: DescriptionStandard SRAM, 128KX8, 55ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32; Categorystorage storage; File Size237KB，7 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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M5M51T08AP-55SL Overview

Standard SRAM, 128KX8, 55ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32

M5M51T08AP-55SL Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	DIP
package instruction	DIP, DIP32,.6
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-PDIP-T32
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.000002 A
Minimum standby current	2 V
Maximum slew rate	0.09 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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Description	Standard SRAM, 128KX8, 55ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 8 X 20 MM, PLASTIC, REVERSE, TSOP1-32	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 8 X 20 MM, PLASTIC, REVERSE, TSOP1-32	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 8 X 20 MM, PLASTIC, TSOP1-32	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 8 X 20 MM, PLASTIC, TSOP1-32	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32
Parts packaging code	DIP	TSOP1	TSOP1	TSOP1	TSOP1	SOIC	SOIC
package instruction	DIP, DIP32,.6	SOP, TSSOP32,.8,20	SOP,	SOP, TSSOP32,.8,20	SOP,	SOP,	SOP, SOP32,.56
Contacts	32	32	32	32	32	32	32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	55 ns	55 ns	55 ns	55 ns	55 ns	55 ns	55 ns
JESD-30 code	R-PDIP-T32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32	32
word count	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	YES	YES	YES	YES	YES	YES	YES
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	SOP	SOP	SOP	SOP	SOP	SOP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Minimum standby current	2 V	2 V	2 V	2 V	2 V	2 V	2 V
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Is it lead-free?	Contains lead	Contains lead	-	Contains lead	-	-	Contains lead
Is it Rohs certified?	incompatible	incompatible	-	incompatible	-	-	incompatible
I/O type	COMMON	COMMON	-	COMMON	-	-	COMMON
JESD-609 code	e0	e0	-	e0	-	-	e0
Encapsulate equivalent code	DIP32,.6	TSSOP32,.8,20	-	TSSOP32,.8,20	-	-	SOP32,.56
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	-	NOT SPECIFIED
power supply	5 V	5 V	-	5 V	-	-	5 V
Maximum standby current	0.000002 A	0.000002 A	-	0.000002 A	-	-	0.000002 A
Maximum slew rate	0.09 mA	0.09 mA	-	0.09 mA	-	-	0.09 mA
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	-	-	Tin/Lead (Sn/Pb)
Terminal pitch	2.54 mm	0.5 mm	-	0.5 mm	-	-	1.27 mm
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	-	NOT SPECIFIED
Maker	-	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi

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