24VL014HT/ST datasheet, PDF - EEWORLD Datasheet

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24VL014HT/ST: Description1K I2C⑩ Serial EEPROM with Half-Array Write-Protect; Categorystorage storage; File Size448KB，28 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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24VL014HT/ST Overview

1K I2C⑩ Serial EEPROM with Half-Array Write-Protect

24VL014HT/ST Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	SOIC
package instruction	4.40 MM, PLASTIC, TSSOP-8
Contacts	8
Reach Compliance Code	compli
ECCN code	EAR99
Factory Lead Time	9 weeks
Maximum clock frequency (fCLK)	0.4 MHz
Data retention time - minimum	200
Durability	1000000 Write/Erase Cycles
I2C control byte	1010DDDR
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
length	4.4 mm
memory density	1024 bi
Memory IC Type	EEPROM
memory width	8
Humidity sensitivity level	1
Number of functions	1
Number of terminals	8
word count	128 words
character code	128
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-20 °C
organize	128X8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP8,.25
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	260
power supply	1.8/3,3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Serial bus type	I2C
Maximum standby current	0.000001 A
Maximum slew rate	0.003 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	1.5 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	3 mm
Maximum write cycle time (tWC)	5 ms
write protect	HARDWARE
Base Number Matches	1

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24VL014H

1K I

™

Serial EEPROM with Half-Array Write-Protect

Device Selection Table

Part Number

24VL014H

Range

1.5 to 3.6V

Max Clock

400 kHz

(1)

Description:

The Microchip Technology Inc. 24VL014H is a 1 Kbit

Serial Electrically Erasable PROM with operation

down to 1.5V. The device is organized as a single block

of 128 x 8-bit memory with a 2-wire serial interface.

Low-current design permits operation with maximum

standby and active currents of only 1

μA

and 400

μA,

respectively. The device has a page write capability for

up to 16 bytes of data. Functional address lines allow

the connection of up to eight 24VL014H devices on the

same bus for up to 8 Kbits of contiguous EEPROM

memory. The device is available in the standard 8-pin

PDIP, 8-pin SOIC (150 mil), TSSOP, 2x3 TDFN and

MSOP packages.

Note 1:

100 kHz for V

< 1.8V

Features:

• Single-Supply with Operation Down to 1.5V

• Low-Power CMOS Technology:

- 400

μA

active current, maximum

- 1

μA

standby current, maximum

• 2-Wire Serial Interface Bus, I

C™ Compatible

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to Eliminate Ground Bounce

• 100 kHz and 400 kHz Compatibility

• Page Write Buffer for up to 16 Bytes

• Self-Timed Write Cycle (including Auto-Erase)

• Hardware Write Protection for Half Array

(40h-7Fh)

• Cascadable up to Eight Devices

• More than 1 Million Erase/Write Cycles

• ESD Protection > 4,000V

• Data Retention > 200 Years

• Factory Programming (QTP) Available

• 8-pin PDIP, SOIC, TSSOP, TDFN and MSOP

Packages

• Temperature Range:

- -20°C to +85°C

• Pb-Free and RoHS Compliant

Block Diagram

A0 A1 A2

HV Generator

Memory

Control

Logic

I/O

Control

Logic

XDEC

EEPROM

Array

SDA SCL

Write-Protect

Circuitry

YDEC

Sense Amp.

R/W Control

Package Types

PDIP, MSOP

SCL

SOIC, TSSOP

SCL

SDA

SDA V

TDFN

A0 1

A1 2

A2 3

8 V

7 WP

6 SCL

5 SDA

2008 Microchip Technology Inc.

DS22116A-page 1

24VL014HT/ST Related Products

	24VL014HT/ST	24VL014HT/MS	24VL014HT/P	24VL014H/ST	24VL014H/P	24VL014H	24VL014HT	24VL014H/MNY	24VL014H/MS
Description	1K I2C⑩ Serial EEPROM with Half-Array Write-Protect	1K I2C⑩ Serial EEPROM with Half-Array Write-Protect	1K I2C⑩ Serial EEPROM with Half-Array Write-Protect	1K I2C⑩ Serial EEPROM with Half-Array Write-Protect	1K I2C⑩ Serial EEPROM with Half-Array Write-Protect	1K I2C⑩ Serial EEPROM with Half-Array Write-Protect	1K I2C⑩ Serial EEPROM with Half-Array Write-Protect	1K I2C⑩ Serial EEPROM with Half-Array Write-Protect	1K I2C⑩ Serial EEPROM with Half-Array Write-Protect
Is it Rohs certified?	conform to	conform to	-	conform to	conform to	-	-	conform to	conform to
Parts packaging code	SOIC	MSOP	DIP	SOIC	DIP	-	-	DFN	MSOP
package instruction	4.40 MM, PLASTIC, TSSOP-8	PLASTIC, MSOP-8	0.300 INCH, LEAD FREE, PLASTIC, DIP-8	4.40 MM, PLASTIC, TSSOP-8	0.300 INCH, LEAD FREE, PLASTIC, DIP-8	-	-	2 X 3 MM, 0.75 MM HEIGHT, PLASTIC, TDFN-8	PLASTIC, MSOP-8
Contacts	8	8	8	8	8	-	-	8	8
Reach Compliance Code	compli	compli	compli	compli	compli	-	-	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	-	-	EAR99	EAR99
Factory Lead Time	9 weeks	5 weeks	-	9 weeks	8 weeks	-	-	-	5 weeks
Maximum clock frequency (fCLK)	0.4 MHz	0.4 MHz	0.4 MHz	0.4 MHz	0.4 MHz	-	-	0.4 MHz	0.4 MHz
Data retention time - minimum	200	200	-	200	200	-	-	200	200
Durability	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	-	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	-	-	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles
I2C control byte	1010DDDR	1010DDDR	-	1010DDDR	1010DDDR	-	-	1010DDDR	1010DDDR
JESD-30 code	R-PDSO-G8	S-PDSO-G8	R-PDIP-T8	R-PDSO-G8	R-PDIP-T8	-	-	R-PDSO-N8	S-PDSO-G8
JESD-609 code	e3	e3	e3	e3	e3	-	-	e4	e3
length	4.4 mm	3 mm	9.271 mm	4.4 mm	9.271 mm	-	-	3 mm	3 mm
memory density	1024 bi	1024 bi	1024 bi	1024 bi	1024 bi	-	-	1024 bi	1024 bi
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	-	-	EEPROM	EEPROM
memory width	8	8	8	8	8	-	-	8	8
Number of functions	1	1	1	1	1	-	-	1	1
Number of terminals	8	8	8	8	8	-	-	8	8
word count	128 words	128 words	128 words	128 words	128 words	-	-	128 words	128 words
character code	128	128	128	128	128	-	-	128	128
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	-	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	-	-	85 °C	85 °C
Minimum operating temperature	-20 °C	-20 °C	-20 °C	-20 °C	-20 °C	-	-	-20 °C	-20 °C
organize	128X8	128X8	128X8	128X8	128X8	-	-	128X8	128X8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	TSSOP	DIP	TSOP1	DIP	-	-	VSON	TSSOP
Encapsulate equivalent code	TSSOP8,.25	TSSOP8,.19	-	TSSOP8,.25	DIP8,.3	-	-	SOLCC8,.11,20	TSSOP8,.19
Package shape	RECTANGULAR	SQUARE	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR	SQUARE
Package form	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE	-	-	SMALL OUTLINE	SMALL OUTLINE
Parallel/Serial	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	-	-	SERIAL	SERIAL
Peak Reflow Temperature (Celsius)	260	260	-	260	NOT APPLICABLE	-	-	-	260
power supply	1.8/3,3 V	1.8/3,3 V	-	1.8/3,3 V	1.8/3,3 V	-	-	1.8/3,3 V	1.8/3,3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.1 mm	5.334 mm	1.2 mm	5.334 mm	-	-	0.8 mm	1.1 mm
Serial bus type	I2C	I2C	I2C	I2C	I2C	-	-	I2C	I2C
Maximum standby current	0.000001 A	0.000001 A	-	0.000001 A	0.000001 A	-	-	0.000001 A	0.000001 A
Maximum slew rate	0.003 mA	0.003 mA	-	0.003 mA	0.003 mA	-	-	0.003 mA	0.003 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	-	-	3.6 V	3.6 V
Minimum supply voltage (Vsup)	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	-	-	1.5 V	1.5 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	-	-	1.8 V	1.8 V
surface mount	YES	YES	NO	YES	NO	-	-	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	-	-	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	OTHER	-	-	OTHER	OTHER
Terminal surface	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	MATTE TIN	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	-	-	NICKEL PALLADIUM GOLD	Matte Tin (Sn) - annealed
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	-	-	NO LEAD	GULL WING
Terminal pitch	0.65 mm	0.65 mm	2.54 mm	0.65 mm	2.54 mm	-	-	0.5 mm	0.65 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	-	-	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	-	40	NOT APPLICABLE	-	-	-	40
width	3 mm	3 mm	7.62 mm	3 mm	7.62 mm	-	-	2 mm	3 mm
Maximum write cycle time (tWC)	5 ms	5 ms	5 ms	5 ms	5 ms	-	-	5 ms	5 ms
write protect	HARDWARE	HARDWARE	-	HARDWARE	HARDWARE	-	-	HARDWARE	HARDWARE
Base Number Matches	1	1	1	1	1	-	-	1	1

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