Ordering number : ENA1370
2SK4198FS
SANYO Semiconductors
DATA SHEET
2SK4198FS
Features
•
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Attachment workability is good by Mica-less package.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
Symbol
VDSS
VGSS
IDc *1
IDpack *2
IDP
PD
Tch
Tstg
EAS
IAV
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO
’
s ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1%
Tc=25°C (SANYO
’
s ideal heat dissipation condition)*3
Conditions
Ratings
600
±30
5
4
18
2.0
30
150
-
-55 to +150
55
4.5
Unit
V
V
A
A
A
W
W
°C
°C
mJ
A
Note :
*1
Shows chip capability.
*2
Package limited.
*3
SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4
VDD=50V, L=5mH, IAV=4.5A
*5
L
≤
5mH, Single pulse
Marking : K4198
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
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N2608QB MS IM TC-00001732 No. A1370-1/5
2SK4198FS
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2.5A
ID=2.5A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=200V, VGS=10V, ID=5A
VDS=200V, VGS=10V, ID=5A
VDS=200V, VGS=10V, ID=5A
IS=5A, VGS=0V
3
1.2
2.4
1.8
360
69
15
13
28
39
15
14.3
3.0
8.2
0.9
1.2
2.34
Ratings
min
600
100
±100
5
typ
max
Unit
V
μA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
3.3
4.7
2.54
15.8
3.23
15.87
6.68
2.76
1.47 MAX
0.8
1
2
3
12.98
0.5
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3FS
2.54
2.54
Switching Time Test Circuit
PW=10μs
D.C.≤0.5%
VDD=200V
Avalanche Resistance Test Circuit
L
ID=2.5A
RL=80Ω
≥50Ω
RG
VOUT
2SK4198FS
50Ω
VDD
VGS=10V
D
G
S
10V
0V
P.G
RGS=50Ω
2SK4198FS
No. A1370-2/5
2SK4198FS
12
ID -- VDS
Tc=25
°
C
10V
14
12
ID -- VGS
VDS=20V
10
Drain Current, ID -- A
Drain Current, ID -- A
8
15V
10
8
6
4
2
0
C
Tc= --25
°
8V
25
°
C
6
75
°
C
4
2
0
6V
VGS=5V
0
5
10
15
20
25
30
IT13521
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source Voltage, VDS -- V
6
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
6
RDS(on) -- Tc
IT13522
ID=2.5A
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
4
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5
5
4
3
Tc=75
°
C
25
°
C
--25
°
C
3
2
2
V
10
S=
G
.5A
=2
I
V, D
1
1
0
5
6
7
8
9
10
11
12
13
14
15
0
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
7
|
y
fs
|
-- ID
IT13523
3
2
10
7
5
3
2
1.0
7
5
Case Temperature, Tc --
°
C
IS -- VSD
IT13524
Forward Transfer Admittance,
|
y
fs
|
-- S
5
3
2
VDS=20V
VGS=0V
1.0
7
5
3
2
5
°
C
--2
Tc=
°
C
75
Source Current, IS -- A
°
C
25
Tc=7
5
°
C
25
°
C
0.1
7
5
3
2
0.1
0.1
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
5
3
SW Time -- ID
10
IT13525
7
0.01
0.2
0.4
0.6
--25
°
C
0.8
3
2
1.0
1.2
1.4
IT13526
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
VDD=200V
VGS=10V
Ciss, Coss, Crss -- pF
f=1MHz
1000
7
5
3
2
100
7
5
3
2
10
7
Switching Time, SW Time -- ns
2
Ciss
100
7
5
3
2
td (off)
tr
Coss
tf
Crss
10
7
0.1
2
3
5
7
td(on)
1.0
2
3
5
7
10
IT13527
0
10
20
30
40
50
IT13528
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
No. A1370-3/5
2SK4198FS
10
9
VGS -- Qg
VDS=200V
ID=5A
Drain Current, ID -- A
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
IDP=18A
IDc=5A
IDpack=4A
PW≤10μs
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
Operation in
this area is
limited by RDS(on).
Tc=25
°
C
Single pulse
2 3
5 7 1.0
2 3
5 7 10
1
10 0
μ
s
0
1m
μ
s
10 s
m
s
10
DC
0m
s
op
er
ati
on
0.01
0.1
2 3
5 7 100
2 3
Total Gate Charge, Qg -- nC
2.5
PD -- Ta
IT13529
35
Drain-to-Source Voltage, VDS -- V
PD -- Tc
5 71000
IT14229
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
30
25
20
15
10
5
0
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°
C
120
EAS -- Ta
IT13531
Case Temperature, Tc --
°
C
IT13532
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta --
°
C
No. A1370-4/5
2SK4198FS
Note on usage : Since the 2SK4198FS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of November, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1370-5/5
stm32/stm8
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