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PMLL4448/T3

Description
DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size114KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PMLL4448/T3 Overview

DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

PMLL4448/T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Base Number Matches1
PMLL4148L; PMLL4448
High-speed switching diodes
Rev. 8 — 1 February 2011
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diodes, fabricated in planar technology, and encapsulated in
small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages.
Table 1.
Product overview
Package
SOD80C
Configuration
single
Type number
PMLL4148L
PMLL4448
1.2 Features and benefits
High switching speed: t
rr
4 ns
Reverse voltage: V
R
75 V
Repetitive peak reverse voltage: V
RRM
100 V
Repetitive peak forward current: I
FRM
450 mA
Small hermetically sealed glass SMD package
1.3 Applications
High-speed switching
Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
I
F
I
FRM
V
R
V
F
Quick reference data
Parameter
forward current
repetitive peak forward
current
reverse voltage
forward voltage
PMLL4148L
PMLL4448
t
rr
[1]
[2]
Conditions
[1]
Min
-
-
-
Typ
-
-
-
-
-
-
-
Max
200
450
75
1
720
1
4
Unit
mA
mA
V
V
mV
V
ns
I
F
= 50 mA
I
F
= 5 mA
I
F
= 100 mA
[2]
-
620
-
-
reverse recovery time
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
When switched from I
F
= 10 mA to I
R
= 60 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.

PMLL4448/T3 Related Products

PMLL4448/T3 PMLL4148L/T3 PMLL4148LT/R PMLL4448-T PMLL4448T/R
Description DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode 0.2A, 100V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2 0.2A, 100V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2 DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
package instruction O-LELF-R2 O-LELF-R2 O-LELF-R2 O-LELF-R2 O-LELF-R2
Contacts 2 2 2 2 2
Reach Compliance Code compliant unknown compliant unknown compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Is it Rohs certified? conform to conform to conform to - conform to
Maker - NXP NXP NXP NXP
Other features - - HIGH SPEED SWITCH HIGH SPEED SWITCH HIGH SPEED SWITCH
Shell connection - - ISOLATED ISOLATED ISOLATED
Configuration - - SINGLE SINGLE SINGLE
Diode component materials - - SILICON SILICON SILICON
Diode type - - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - - 1 V 1 V 1 V
JESD-30 code - - O-LELF-R2 O-LELF-R2 O-LELF-R2
JESD-609 code - - e3 e3 e3
Maximum non-repetitive peak forward current - - 4 A 2 A 2 A
Number of components - - 1 1 1
Number of terminals - - 2 2 2
Maximum operating temperature - - 200 °C 200 °C 200 °C
Maximum output current - - 0.2 A 0.2 A 0.2 A
Package body material - - GLASS GLASS GLASS
Package shape - - ROUND ROUND ROUND
Package form - - LONG FORM LONG FORM LONG FORM
Maximum power dissipation - - 0.5 W 0.5 W 0.5 W
Certification status - - Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage - - 100 V 100 V 100 V
Maximum reverse recovery time - - 0.004 µs 0.004 µs 0.004 µs
surface mount - - YES YES YES
Terminal surface - - Tin (Sn) TIN Tin (Sn)
Terminal form - - WRAP AROUND WRAP AROUND WRAP AROUND
Terminal location - - END END END
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