MX69LW1621BXBI-70 datasheet, PDF

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MX69LW1621BXBI-70: DescriptionMemory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66; Categorystorage storage; File Size512KB，53 Pages; ManufacturerMacronix; Websitehttp://www.macronix.com/en-us/Pages/default.aspx

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MX69LW1621BXBI-70 Overview

Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66

MX69LW1621BXBI-70 Parametric

Parameter Name	Attribute value
Parts packaging code	BGA
package instruction	LFBGA, BGA66,8X12,32
Contacts	66
Reach Compliance Code	unknown
Maximum access time	70 ns
Other features	SRAM IS ORGANISED AS 128K X 16
JESD-30 code	R-PBGA-B66
length	11 mm
memory density	16777216 bit
Memory IC Type	MEMORY CIRCUIT
memory width	16
Mixed memory types	FLASH+SRAM
Number of functions	1
Number of terminals	66
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX16
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA66,8X12,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
power supply	3/3.3 V
Certification status	Not Qualified
Maximum seat height	1.4 mm
Maximum slew rate	0.07 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	8 mm
Base Number Matches	1

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ADVANCED INFORMATION

MX69LW1621/1641T/B

16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM

MIXED MULTI CHIP PACKAGE MEMORY

FEATURES

• Supply voltage range: 2.7V to 3.6V

• Fast access time: Flash memory:70/90ns

SRAM memory:70/85ns

• Operation temperature range: -40 ~ 85°

• 100,000 minimum erase/program cycles

• Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Status Register feature for detection of program or

erase cycle completion

• Read While Write Operation between Bank I, Bank II

• Software command control

• Selective Block Lock

FLASH

Word mode only

15mA maximum active current

0.1uA typical standby current

Program Time: 4ms typical /each blocks

Auto program for Bank I (2Mb)

- Word Programming (1 word)

- Page Programming (128 word)

• Auto program for Bank II (14Mb)

- Page programming (128 word)

• Auto erase operation

- Automatically erases any combination of the blocks

- Fast erase time: 40ms typical for single block erase

•

SRAM

•

MX69LW1621T/B: 128K wordx16 Bit

MX69LW1641T/B: 256K wordx16 Bit

70mA maximum active current

1uA typical standby current

Data retention supply voltage: 2.0V~3.6V

Byte data control : LBs(Q0 to Q7) and UBs(Q8 to Q15)

GENERAL DESCRIPTION

The MXIC's mixed multi chip memory combines Flash

and SRAM into a single package. The mixed multi chip

memory operates 2.7 to 3.6V power supply to allow for

simple in-system operation.

The Flash memory of mixed multi chip memory manu-

factured with MXIC's advanced nonvolatile memory tech-

nology, the flash memory of mixed multi chip memory

provide simultaneous operation which can read data while

program/erase, the data is divided into two banks of

Bank I and BankII. The device offers access times of

70ns/90ns, and a low 0.1uA typical standby current.

The 2M-bit SRAM of MX69LW1621T/B is organized as

128K-word by 16-bit. The 4M-bit SRAM of

MX69LW1641T/B is organized as 256K-word by 16-bit.

The advanced CMOS technology and circuit techniques

provide both high speed and low power features of with

a typical CMOS standby current of 1uA and maximum

access time of 70ns/85ns in 3V operation.

The mixed multi chip memory is available in 11mm x

8mm FBGA Package to suit a variety of design applica-

tions.

P/N:PM0925

REV. 0.1, MAY 02, 2003

MX69LW1621BXBI-70 Related Products

	MX69LW1621BXBI-70	MX69LW1641TXBI-90	MX69LW1641TXBI-70	MX69LW1641BXBI-70	MX69LW1641BXBI-90	MX69LW1621TXBI-70	MX69LW1621TXBI-90	MX69LW1621BXBI-90
Description	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 11 X 8 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, MO-219, FBGA-66
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	LFBGA, BGA66,8X12,32	LFBGA, BGA66,8X12,32	LFBGA, BGA66,8X12,32	LFBGA, BGA66,8X12,32	LFBGA, BGA66,8X12,32	LFBGA, BGA66,8X12,32	LFBGA, BGA66,8X12,32	LFBGA, BGA66,8X12,32
Contacts	66	66	66	66	66	66	66	66
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	70 ns	90 ns	70 ns	70 ns	90 ns	70 ns	90 ns	90 ns
Other features	SRAM IS ORGANISED AS 128K X 16	SRAM IS ORGANISED AS 256K X 16	SRAM IS ORGANISED AS 256K X 16	SRAM IS ORGANISED AS 256K X 16	SRAM IS ORGANISED AS 256K X 16	SRAM IS ORGANISED AS 128K X 16	SRAM IS ORGANISED AS 128K X 16	SRAM IS ORGANISED AS 128K X 16
JESD-30 code	R-PBGA-B66	R-PBGA-B66	R-PBGA-B66	R-PBGA-B66	R-PBGA-B66	R-PBGA-B66	R-PBGA-B66	R-PBGA-B66
length	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm
memory density	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit
Memory IC Type	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
memory width	16	16	16	16	16	16	16	16
Mixed memory types	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	66	66	66	66	66	66	66	66
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA
Encapsulate equivalent code	BGA66,8X12,32	BGA66,8X12,32	BGA66,8X12,32	BGA66,8X12,32	BGA66,8X12,32	BGA66,8X12,32	BGA66,8X12,32	BGA66,8X12,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
power supply	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm
Maximum slew rate	0.07 mA	0.07 mA	0.07 mA	0.07 mA	0.07 mA	0.07 mA	0.07 mA	0.07 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm
Base Number Matches	1	1	1	1	1	1	1	-

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