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Datasheet> All Categories > Discrete semiconductor> The transistor> ZUMT491
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ZUMT491

Description
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-323, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size26KB，1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZUMT491 Overview

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-323, 3 PIN

ZUMT491 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Base Number Matches1

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SOT323 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE
1
– OCTOBER 94
FEATURES
* Extremely low saturation voltage
* 500mW power dissipation
* 1 Amp continuous collector current (I
C
)
APPLICATIONS
* Ideally suited for space / weight critical applications
ZUMT491
C
E
B
SOT323
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
80
60
5
2
1
200
500
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector Base
Breakdown Voltage
Collector Emitter
Breakdown Voltage
Emitter Base
Breakdown Voltage
Collector Cut Off
Current
Collector Cut Off
Current
Emitter Cut Off Current
Collector Emitter
Saturation Voltage
Base Emitter
Saturation Voltage
Base Emitter
Turn On Voltage
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
MIN.
80
60
5
100
100
100
0.25
0.50
1.1
1.0
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=100µA, I
E
=0
I
C
=10mA*, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=60V
VCE=60V
V
EB
=4V, I
C
=0
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=100mA*
IC=1A, V
CE
=5V*
* Measured under pulsed conditions. Pulse width 300µS. Duty cycle
2%.

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