ZXTD09N50DE6
E6
SuperSOT
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=50V; R
SAT
= 160m ; I
C
= 1A
DESCRIPTION
A dual NPN low saturation transistor combination contained in a single 6 lead
SOT23 package. Each transistor is the equivalent to the ZUMT619 device.
FEATURES
•
•
•
•
•
•
•
ORDERING INFORMATION
DEVICE
ZXTD09N50DE6TA
ZXTD09N50DE6TC
SOT23-6
Low Equivalent On Resistance
Low Saturation Voltage
I
C
=1A Continuous Collector Current
SOT23-6 package
B1
B2
C1
C2
APPLICATIONS
LCD Backlighting inverter circuits
Boost functions in DC-DC converters
E1
E2
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
C1
E1
C2
Top View
B1
E2
B2
DEVICE MARKING
D619
ISSUE 2 - JUNE 2001
1
ZXTD09N50DE6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
LIMIT
50
50
5
2
1.0
200
0.90
7.2
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
V
A
A
mA
W
mW/°C
W
mW/°C
W
mW/°C
°C
P
D
P
D
T
j
:T
stg
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
SYMBOL
R
θJA
R
θJA
R
θJA
VALUE
139
73
113
UNIT
°C/W
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 2 - JUNE 2001
2
ZXTD09N50DE6
E6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
MIN.
50
50
5
10
10
10
24
60
120
160
940
850
200
300
200
75
20
420
450
350
130
60
215
10
150
425
MHz
pF
ns
ns
35
80
200
270
1100
1100
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
CONDITIONS.
I
C
= 100µA
I
C
= 10mA*
I
E
= 100µA
V
CB
= 40V
V
EB
= 4V
V
CES = 40V
Emitter-Base Breakdown V
(BR)EBO
Voltage
Collector Cut-Off Current I
CBO
Emitter Cut-Off Current
I
EBO
Collector Emitter Cut-Off I
CES
Current
Collector-Emitter
Saturation Voltage
V
CE(sat)
I
C
=
I
C
=
I
C
=
I
C
=
100mA, I
B
= 10mA*
250mA, I
B
= 10mA*
500mA, I
B
= 10mA*
1A, I
B
= 50mA*
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
I
C
= 1A, I
B
= 50mA*
I
C
= 1A, V
CE
= 2V*
I
C
=10mA, V
CE
= 2V*
I
C
= 100mA, V
CE
=2 V*
I
C
= 500mA, V
CE
=2V*
I
C
= 1A, V
CE
= 2V*
I
C
= 1.5A, V
CE
=2 V*
I
C
= 50mA, V
CE
=10V
f= 100MHz
V
CB
= 10V, f=1MHz
V
CC
=10 V, I
C
= 1A
I
B1
=I
B2
=100mA
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
ISSUE 2 - JUNE 2001
3
Embedded System
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