ZVP2120A datasheet, PDF - EEWORLD Datasheet

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ZVP2120A: DescriptionSmall Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size36KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZVP2120A Overview

Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN

ZVP2120A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	0.12 A
Maximum drain current (ID)	0.12 A
Maximum drain-source on-resistance	25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	7 pF
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.7 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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Is it Rohs certified?	conform to	conform to	incompatible	incompatible	conform to	incompatible	incompatible	incompatible
package instruction	CYLINDRICAL, O-PBCY-W3	IN-LINE, R-PSIP-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	not_compliant	not_compliant	unknown	unknown	compliant	unknown	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	200 V	45 V	400 V	200 V	200 V	100 V	60 V	450 V
Maximum drain current (Abs) (ID)	0.12 A	0.23 A	0.1 A	0.1 A	0.3 A	0.6 A	0.4 A	0.1 A
Maximum drain current (ID)	0.12 A	0.23 A	0.1 A	0.1 A	0.3 A	0.6 A	0.4 A	0.1 A
Maximum drain-source on-resistance	25 Ω	14 Ω	150 Ω	80 Ω	28 Ω	8 Ω	14 Ω	150 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	O-PBCY-W3	R-PSIP-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e3	e3	e0	e0	e3	e0	e0	e0
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	RECTANGULAR	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	IN-LINE	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260	260	235	235	260	235	235	235
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	0.7 W	0.7 W	5 W	5 W	5 W	5 W	5 W	5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	SINGLE	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	40	10	NOT SPECIFIED	40	NOT SPECIFIED	NOT SPECIFIED	10
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
JEDEC-95 code	-	-	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39
Maximum power consumption environment	-	-	5 W	5 W	5 W	5 W	5 W	5 W
Maker	-	-	-	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors

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